IRFP17N50LPBF Todos los transistores

 

IRFP17N50LPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFP17N50LPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 220 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 51 nS
   Cossⓘ - Capacitancia de salida: 325 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm
   Paquete / Cubierta: TO247AC
     - Selección de transistores por parámetros

 

IRFP17N50LPBF Datasheet (PDF)

 ..1. Size:208K  international rectifier
 irfp17n50lpbf.pdf pdf_icon

IRFP17N50LPBF

PD - 95662IRFP17N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies500V 0.28 170ns 16A Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

 ..2. Size:181K  vishay
 irfp17n50l irfp17n50lpbf sihfp17n50l.pdf pdf_icon

IRFP17N50LPBF

IRFP17N50L, SiHFP17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY SuperFast Body Diode Eliminates the NeedVDS (V) 500AvailableFor External Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.28RoHS* Low Gate Charge Results in Simple DriveQg (Max.) (nC) 130 COMPLIANTRequirementQgs (nC) 33 Enhanced dV/dt Capabilities Offer ImprovedQgd (nC) 59Rugg

 4.1. Size:118K  international rectifier
 irfp17n50ls.pdf pdf_icon

IRFP17N50LPBF

PD - 94351IRFP17N50LSSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)VDSS RDS(on) typ. Trr ID Uninterruptible Power Supply High Speed Power Switching500V 0.28 170ns 16A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully

 4.2. Size:91K  international rectifier
 irfp17n50l.pdf pdf_icon

IRFP17N50LPBF

PD - 94322IRFP17N50LSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)RDS(on) typ. Trr typ. IDVDSS Zero Voltage Switching (ZVS) and High500V 0.28 170ns 16AFrequency Circuit Uninterruptible Power Supply High Speed Power Switching PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and D

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: NTD4963N-1G | AP20T15GI-HF | IRFH7194 | TSM4N80CZ | HGN058N08SL | IRFS640B | JFFM13N65D

 

 
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