IRFP17N50LPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP17N50LPBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 220 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 16 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 130 nC
Время нарастания (tr): 51 ns
Выходная емкость (Cd): 325 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.32 Ohm
Тип корпуса: TO247AC
Аналог (замена) для IRFP17N50LPBF
IRFP17N50LPBF Datasheet (PDF)
irfp17n50lpbf.pdf
PD - 95662IRFP17N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies500V 0.28 170ns 16A Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.
irfp17n50l irfp17n50lpbf sihfp17n50l.pdf
IRFP17N50L, SiHFP17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY SuperFast Body Diode Eliminates the NeedVDS (V) 500AvailableFor External Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.28RoHS* Low Gate Charge Results in Simple DriveQg (Max.) (nC) 130 COMPLIANTRequirementQgs (nC) 33 Enhanced dV/dt Capabilities Offer ImprovedQgd (nC) 59Rugg
irfp17n50ls.pdf
PD - 94351IRFP17N50LSSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)VDSS RDS(on) typ. Trr ID Uninterruptible Power Supply High Speed Power Switching500V 0.28 170ns 16A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully
irfp17n50l.pdf
PD - 94322IRFP17N50LSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)RDS(on) typ. Trr typ. IDVDSS Zero Voltage Switching (ZVS) and High500V 0.28 170ns 16AFrequency Circuit Uninterruptible Power Supply High Speed Power Switching PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and D
irfp17n50l sihfp17n50l.pdf
IRFP17N50L, SiHFP17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY SuperFast Body Diode Eliminates the NeedVDS (V) 500AvailableFor External Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.28RoHS* Low Gate Charge Results in Simple DriveQg (Max.) (nC) 130 COMPLIANTRequirementQgs (nC) 33 Enhanced dV/dt Capabilities Offer ImprovedQgd (nC) 59Rugg
irfp17n50l.pdf
iscN-Channel MOSFET Transistor IRFP17N50LFEATURESLow drain-source on-resistance:RDS(ON) =0.32 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
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