Справочник MOSFET. IRFP17N50LPBF

 

IRFP17N50LPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFP17N50LPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 220 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 130 nC
   trⓘ - Время нарастания: 51 ns
   Cossⓘ - Выходная емкость: 325 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.32 Ohm
   Тип корпуса: TO247AC

 Аналог (замена) для IRFP17N50LPBF

 

 

IRFP17N50LPBF Datasheet (PDF)

 ..1. Size:208K  international rectifier
 irfp17n50lpbf.pdf

IRFP17N50LPBF IRFP17N50LPBF

PD - 95662IRFP17N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies500V 0.28 170ns 16A Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

 ..2. Size:181K  vishay
 irfp17n50l irfp17n50lpbf sihfp17n50l.pdf

IRFP17N50LPBF IRFP17N50LPBF

IRFP17N50L, SiHFP17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY SuperFast Body Diode Eliminates the NeedVDS (V) 500AvailableFor External Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.28RoHS* Low Gate Charge Results in Simple DriveQg (Max.) (nC) 130 COMPLIANTRequirementQgs (nC) 33 Enhanced dV/dt Capabilities Offer ImprovedQgd (nC) 59Rugg

 4.1. Size:118K  international rectifier
 irfp17n50ls.pdf

IRFP17N50LPBF IRFP17N50LPBF

PD - 94351IRFP17N50LSSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)VDSS RDS(on) typ. Trr ID Uninterruptible Power Supply High Speed Power Switching500V 0.28 170ns 16A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully

 4.2. Size:91K  international rectifier
 irfp17n50l.pdf

IRFP17N50LPBF IRFP17N50LPBF

PD - 94322IRFP17N50LSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)RDS(on) typ. Trr typ. IDVDSS Zero Voltage Switching (ZVS) and High500V 0.28 170ns 16AFrequency Circuit Uninterruptible Power Supply High Speed Power Switching PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and D

 4.3. Size:176K  vishay
 irfp17n50l sihfp17n50l.pdf

IRFP17N50LPBF IRFP17N50LPBF

IRFP17N50L, SiHFP17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY SuperFast Body Diode Eliminates the NeedVDS (V) 500AvailableFor External Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.28RoHS* Low Gate Charge Results in Simple DriveQg (Max.) (nC) 130 COMPLIANTRequirementQgs (nC) 33 Enhanced dV/dt Capabilities Offer ImprovedQgd (nC) 59Rugg

 4.4. Size:400K  inchange semiconductor
 irfp17n50l.pdf

IRFP17N50LPBF IRFP17N50LPBF

iscN-Channel MOSFET Transistor IRFP17N50LFEATURESLow drain-source on-resistance:RDS(ON) =0.32 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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