IRFP22N50APBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP22N50APBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 277 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 22 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 94 nS
Conductancia de drenaje-sustrato (Cd): 513 pF
Resistencia entre drenaje y fuente RDS(on): 0.23 Ohm
Paquete / Cubierta: TO247AC
Búsqueda de reemplazo de MOSFET IRFP22N50APBF
IRFP22N50APBF Datasheet (PDF)
irfp22n50apbf.pdf
PD - 95004IRFP22N50APbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l UninterruptIble Power Supply 500V 0.23 22Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalan
irfp22n50apbf sihfp22n50a.pdf
IRFP22N50A, SiHFP22N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.23RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 120 COMPLIANTRuggednessQgs (nC) 32 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 52and CurrentCon
irfp22n50apbf.pdf
IRFP22N50APbF HEXFET Power MOSFET ApplicationsDV 500V DSS Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply RDS(on) max 0.23 G High speed power switching I 22A D (Silicon Limited) SD Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness S Fully
irfp22n50a.pdf
PD- 91833CSMPS MOSFETIRFP22N50AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.23 22A High Speed Power SwitchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curren
irfp22n50a sihfp22n50a.pdf
IRFP22N50A, SiHFP22N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.23RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 120 COMPLIANTRuggednessQgs (nC) 32 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 52and CurrentCon
irfp22n50a.pdf
iscN-Channel MOSFET Transistor IRFP22N50AFEATURESLow drain-source on-resistance:RDS(ON) =0.23 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
