IRFP22N50APBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP22N50APBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 277 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 94 nS
Cossⓘ - Capacitancia de salida: 513 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
Encapsulados: TO247AC
Búsqueda de reemplazo de IRFP22N50APBF MOSFET
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IRFP22N50APBF datasheet
irfp22n50apbf.pdf
PD - 95004 IRFP22N50APbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply 500V 0.23 22A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalan
irfp22n50apbf sihfp22n50a.pdf
IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.23 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 32 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 52 and Current Con
irfp22n50apbf.pdf
IRFP22N50APbF HEXFET Power MOSFET Applications D V 500V DSS Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply R DS(on) max 0.23 G High speed power switching I 22A D (Silicon Limited) S D Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness S Fully
irfp22n50a.pdf
PD- 91833C SMPS MOSFET IRFP22N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.23 22A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curren
Otros transistores... IRFP150NPBF, IRFP150PBF, IRFP15N60L, IRFP15N60LPBF, IRFP17N50L, IRFP17N50LPBF, IRFP21N60L, IRFP21N60LPBF, IRF640N, IRFP22N60C3PBF, IRFP22N60K, IRFP22N60KPBF, IRFP23N50L, IRFP23N50LPBF, IRFP240PBF, IRFP240R, IRFP242R
History: MBNP2074G6
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