IRFP22N50APBF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRFP22N50APBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 277 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 94 ns
Cossⓘ - Выходная емкость: 513 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.23 Ohm
Тип корпуса: TO247AC
- подбор MOSFET транзистора по параметрам
IRFP22N50APBF Datasheet (PDF)
irfp22n50apbf.pdf

PD - 95004IRFP22N50APbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l UninterruptIble Power Supply 500V 0.23 22Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalan
irfp22n50apbf sihfp22n50a.pdf

IRFP22N50A, SiHFP22N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.23RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 120 COMPLIANTRuggednessQgs (nC) 32 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 52and CurrentCon
irfp22n50apbf.pdf

IRFP22N50APbF HEXFET Power MOSFET ApplicationsDV 500V DSS Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply RDS(on) max 0.23 G High speed power switching I 22A D (Silicon Limited) SD Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness S Fully
irfp22n50a.pdf

PD- 91833CSMPS MOSFETIRFP22N50AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.23 22A High Speed Power SwitchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curren
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: WMK16N70SR | AO3423 | IRFP441R | PSMG60-08 | QM3002F | NCEP055N10G | AFP3497
History: WMK16N70SR | AO3423 | IRFP441R | PSMG60-08 | QM3002F | NCEP055N10G | AFP3497



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