IRFP22N50APBF. Аналоги и основные параметры
Наименование производителя: IRFP22N50APBF
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 277 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 22 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 94 ns
Cossⓘ - Выходная емкость: 513 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.23 Ohm
Тип корпуса: TO247AC
Аналог (замена) для IRFP22N50APBF
- подборⓘ MOSFET транзистора по параметрам
IRFP22N50APBF даташит
irfp22n50apbf.pdf
PD - 95004 IRFP22N50APbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply 500V 0.23 22A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalan
irfp22n50apbf sihfp22n50a.pdf
IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.23 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 32 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 52 and Current Con
irfp22n50apbf.pdf
IRFP22N50APbF HEXFET Power MOSFET Applications D V 500V DSS Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply R DS(on) max 0.23 G High speed power switching I 22A D (Silicon Limited) S D Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness S Fully
irfp22n50a.pdf
PD- 91833C SMPS MOSFET IRFP22N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.23 22A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curren
Другие IGBT... IRFP150NPBF, IRFP150PBF, IRFP15N60L, IRFP15N60LPBF, IRFP17N50L, IRFP17N50LPBF, IRFP21N60L, IRFP21N60LPBF, IRF640N, IRFP22N60C3PBF, IRFP22N60K, IRFP22N60KPBF, IRFP23N50L, IRFP23N50LPBF, IRFP240PBF, IRFP240R, IRFP242R
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG | HYG053N10NS1B | HYG053N10NS1P | AP220N04T | AP220N04P | QM3126M3 | AUP060N055
Popular searches
a733 | irf9630 | mj2955 | mje15030 | 2n3904 transistor | 2sd424 | 2sc828 | 2n4125





