IRFP22N60C3PBF Todos los transistores

 

IRFP22N60C3PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFP22N60C3PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 280 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO247AC
 

 Búsqueda de reemplazo de IRFP22N60C3PBF MOSFET

   - Selección ⓘ de transistores por parámetros

 

IRFP22N60C3PBF PDF Specs

 ..1. Size:219K  international rectifier
irfp22n60c3pbf.pdf pdf_icon

IRFP22N60C3PBF

PD - 95005 SMPS MOSFET IRFP22N60C3PbF Superjunction Power MOSFET AppIications l PFC and Primary Switch in SMPS l Uninterruptible Power Supply VDSS@TJ max RDS(on) typ. ID l High Speed Power Switching l Hard Switched and High Frequency Circuits 650V 155m 22A l Lead-Free Benefits D l Ultra Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dy... See More ⇒

 5.1. Size:123K  international rectifier
irfp22n60k.pdf pdf_icon

IRFP22N60C3PBF

PD - 94414 IRFP22N60K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID l Hard Switching Primary or PFS Switch 600V 240m 22A l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Full... See More ⇒

 5.2. Size:179K  vishay
irfp22n60k sihfp22n60k.pdf pdf_icon

IRFP22N60C3PBF

IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 150 COMPLIANT Ruggedness Qgs (nC) 45 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 76 and Current Co... See More ⇒

 5.3. Size:177K  vishay
irfp22n60k irfp22n60kpbf sihfp22n60k.pdf pdf_icon

IRFP22N60C3PBF

IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 150 COMPLIANT Ruggedness Qgs (nC) 45 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 76 and Current Co... See More ⇒

Otros transistores... IRFP150PBF , IRFP15N60L , IRFP15N60LPBF , IRFP17N50L , IRFP17N50LPBF , IRFP21N60L , IRFP21N60LPBF , IRFP22N50APBF , IRFP260N , IRFP22N60K , IRFP22N60KPBF , IRFP23N50L , IRFP23N50LPBF , IRFP240PBF , IRFP240R , IRFP242R , IRFP244PBF .

 

 
Back to Top

 


IRFP22N60C3PBF  IRFP22N60C3PBF  IRFP22N60C3PBF 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AP6007S | AP5N50K | AP5N20K | AP5N10S | AP5N10M | AP50P20Q | AP50P20K | AP50P06K | AP50N06K | AP50N04QD | AP50N04Q | AP50N04K | AP50N04GD | AP5040QD | AP4946S | AP4847

 

 

 
Back to Top

 

Popular searches

irf9630 | mj2955 | mje15030 | 2n3904 transistor | 2sd424 | 2sc828 | 2n4125 | tip42c transistor

 


 
.