All MOSFET. IRFP22N60C3PBF Datasheet


IRFP22N60C3PBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP22N60C3PBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 280 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 22 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 39 nS

Drain-Source Capacitance (Cd): 190 pF

Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm

Package: TO247AC

IRFP22N60C3PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRFP22N60C3PBF Datasheet (PDF)

0.1. irfp22n60c3pbf.pdf Size:219K _international_rectifier


PD - 95005SMPS MOSFETIRFP22N60C3PbF Superjunction Power MOSFETAppIicationsl PFC and Primary Switch in SMPSl Uninterruptible Power SupplyVDSS@TJ max RDS(on) typ. IDl High Speed Power Switchingl Hard Switched and High Frequency Circuits650V 155m 22A l Lead-FreeBenefitsDl Ultra Low Gate Charge Qg results in Simple DriveRequirement l Improved Gate, Avalanche and Dy

5.1. irfp22n60k.pdf Size:123K _international_rectifier


PD - 94414IRFP22N60KSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. IDl Hard Switching Primary or PFS Switch600V 240m 22Al Switch Mode Power Supply (SMPS)l Uninterruptible Power Supplyl High Speed Power Switchingl Motor DriveBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamic dv/dt Ruggednessl Full

5.2. irfp22n60k irfp22n60kpbf sihfp22n60k.pdf Size:177K _vishay


IRFP22N60K, SiHFP22N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600RequirementAvailableRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 150COMPLIANTRuggednessQgs (nC) 45 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 76and CurrentCo

 5.3. irfp22n60k.pdf Size:401K _inchange_semiconductor


iscN-Channel MOSFET Transistor IRFP22N60KFEATURESLow drain-source on-resistance:RDS(ON) =0.28 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF1404 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .


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