IRFP22N60KPBF Todos los transistores

 

IRFP22N60KPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFP22N60KPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 370 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 99 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
   Paquete / Cubierta: TO247AC
 

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IRFP22N60KPBF datasheet

 ..1. Size:177K  vishay
irfp22n60k irfp22n60kpbf sihfp22n60k.pdf pdf_icon

IRFP22N60KPBF

IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 150 COMPLIANT Ruggedness Qgs (nC) 45 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 76 and Current Co... See More ⇒

 4.1. Size:123K  international rectifier
irfp22n60k.pdf pdf_icon

IRFP22N60KPBF

PD - 94414 IRFP22N60K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID l Hard Switching Primary or PFS Switch 600V 240m 22A l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Full... See More ⇒

 4.2. Size:179K  vishay
irfp22n60k sihfp22n60k.pdf pdf_icon

IRFP22N60KPBF

IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 150 COMPLIANT Ruggedness Qgs (nC) 45 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 76 and Current Co... See More ⇒

 4.3. Size:401K  inchange semiconductor
irfp22n60k.pdf pdf_icon

IRFP22N60KPBF

iscN-Channel MOSFET Transistor IRFP22N60K FEATURES Low drain-source on-resistance RDS(ON) =0.28 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒

Otros transistores... IRFP15N60LPBF , IRFP17N50L , IRFP17N50LPBF , IRFP21N60L , IRFP21N60LPBF , IRFP22N50APBF , IRFP22N60C3PBF , IRFP22N60K , IRFB4227 , IRFP23N50L , IRFP23N50LPBF , IRFP240PBF , IRFP240R , IRFP242R , IRFP244PBF , IRFP250MPBF , IRFP250NPBF .

 

 
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