All MOSFET. IRFP22N60KPBF Datasheet

 

IRFP22N60KPBF Datasheet and Replacement


   Type Designator: IRFP22N60KPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 99 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO247AC
 

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IRFP22N60KPBF Datasheet (PDF)

 ..1. Size:177K  vishay
 irfp22n60k irfp22n60kpbf sihfp22n60k.pdf pdf_icon

IRFP22N60KPBF

IRFP22N60K, SiHFP22N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600RequirementAvailableRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 150COMPLIANTRuggednessQgs (nC) 45 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 76and CurrentCo

 4.1. Size:123K  international rectifier
 irfp22n60k.pdf pdf_icon

IRFP22N60KPBF

PD - 94414IRFP22N60KSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. IDl Hard Switching Primary or PFS Switch600V 240m 22Al Switch Mode Power Supply (SMPS)l Uninterruptible Power Supplyl High Speed Power Switchingl Motor DriveBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamic dv/dt Ruggednessl Full

 4.2. Size:179K  vishay
 irfp22n60k sihfp22n60k.pdf pdf_icon

IRFP22N60KPBF

IRFP22N60K, SiHFP22N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600RequirementAvailableRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 150COMPLIANTRuggednessQgs (nC) 45 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 76and CurrentCo

 4.3. Size:401K  inchange semiconductor
 irfp22n60k.pdf pdf_icon

IRFP22N60KPBF

iscN-Channel MOSFET Transistor IRFP22N60KFEATURESLow drain-source on-resistance:RDS(ON) =0.28 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

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Datasheet: IRFP15N60LPBF , IRFP17N50L , IRFP17N50LPBF , IRFP21N60L , IRFP21N60LPBF , IRFP22N50APBF , IRFP22N60C3PBF , IRFP22N60K , AON6414A , IRFP23N50L , IRFP23N50LPBF , IRFP240PBF , IRFP240R , IRFP242R , IRFP244PBF , IRFP250MPBF , IRFP250NPBF .

History: PJP6NA40 | IRFP22N60K | NCEP0135AF | AP9510GM | AOT416

Keywords - IRFP22N60KPBF MOSFET datasheet

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