IRFP23N50LPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP23N50LPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 370 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 94 nS

Cossⓘ - Capacitancia de salida: 380 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.235 Ohm

Encapsulados: TO247AC

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IRFP23N50LPBF datasheet

 ..1. Size:192K  vishay
 irfp23n50l irfp23n50lpbf sihfp23n50l.pdf pdf_icon

IRFP23N50LPBF

IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.190 Lower Gate Charge Results in Simpler Drive RoHS* Qg (Max.) (nC) 150 COMPLIANT Requirements Qgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 4.1. Size:104K  international rectifier
 irfp23n50l.pdf pdf_icon

IRFP23N50LPBF

PD - 94230 SMPS MOSFET IRFP23N50L HEXFET Power MOSFET Applications VDSS RDS(on) typ. Trr typ. ID Switch Mode Power Supply (SMPS) 500V 0.190 170ns 23A UninterruptIble Power Supply High Speed Power Switching Motor Drive Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and

 4.2. Size:188K  vishay
 irfp23n50l sihfp23n50l.pdf pdf_icon

IRFP23N50LPBF

IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.190 Lower Gate Charge Results in Simpler Drive RoHS* Qg (Max.) (nC) 150 COMPLIANT Requirements Qgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 4.3. Size:400K  inchange semiconductor
 irfp23n50l.pdf pdf_icon

IRFP23N50LPBF

iscN-Channel MOSFET Transistor IRFP23N50L FEATURES Low drain-source on-resistance RDS(ON) =0.235 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

MOSTRAR MÁS

Otros transistores... IRFP17N50LPBF, IRFP21N60L, IRFP21N60LPBF, IRFP22N50APBF, IRFP22N60C3PBF, IRFP22N60K, IRFP22N60KPBF, IRFP23N50L, 10N60, IRFP240PBF, IRFP240R, IRFP242R, IRFP244PBF, IRFP250MPBF, IRFP250NPBF, IRFP250PBF, IRFP250R