All MOSFET. IRFP23N50LPBF Datasheet

 

IRFP23N50LPBF Datasheet and Replacement


   Type Designator: IRFP23N50LPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 94 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.235 Ohm
   Package: TO247AC
 

 IRFP23N50LPBF substitution

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IRFP23N50LPBF Datasheet (PDF)

 ..1. Size:192K  vishay
 irfp23n50l irfp23n50lpbf sihfp23n50l.pdf pdf_icon

IRFP23N50LPBF

IRFP23N50L, SiHFP23N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsAvailableRDS(on) ()VGS = 10 V 0.190 Lower Gate Charge Results in Simpler DriveRoHS*Qg (Max.) (nC) 150COMPLIANTRequirementsQgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 4.1. Size:104K  international rectifier
 irfp23n50l.pdf pdf_icon

IRFP23N50LPBF

PD - 94230SMPS MOSFETIRFP23N50LHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. Trr typ. ID Switch Mode Power Supply (SMPS)500V 0.190 170ns 23A UninterruptIble Power Supply High Speed Power Switching Motor DriveBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and

 4.2. Size:188K  vishay
 irfp23n50l sihfp23n50l.pdf pdf_icon

IRFP23N50LPBF

IRFP23N50L, SiHFP23N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsAvailableRDS(on) ()VGS = 10 V 0.190 Lower Gate Charge Results in Simpler DriveRoHS*Qg (Max.) (nC) 150COMPLIANTRequirementsQgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 4.3. Size:400K  inchange semiconductor
 irfp23n50l.pdf pdf_icon

IRFP23N50LPBF

iscN-Channel MOSFET Transistor IRFP23N50LFEATURESLow drain-source on-resistance:RDS(ON) =0.235 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

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Datasheet: IRFP17N50LPBF , IRFP21N60L , IRFP21N60LPBF , IRFP22N50APBF , IRFP22N60C3PBF , IRFP22N60K , IRFP22N60KPBF , IRFP23N50L , IRFB4227 , IRFP240PBF , IRFP240R , IRFP242R , IRFP244PBF , IRFP250MPBF , IRFP250NPBF , IRFP250PBF , IRFP250R .

History: AONS420A70

Keywords - IRFP23N50LPBF MOSFET datasheet

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