IRFP260NPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP260NPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 603 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO247AC

 Búsqueda de reemplazo de IRFP260NPBF MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRFP260NPBF datasheet

 ..1. Size:180K  international rectifier
 irfp260npbf.pdf pdf_icon

IRFP260NPBF

PD - 95010A IRFP260NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.04 l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

 ..2. Size:212K  inchange semiconductor
 irfp260npbf.pdf pdf_icon

IRFP260NPBF

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP260NPBF FEATURES With TO-247 packaging Ease of paralleling High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 6.1. Size:122K  international rectifier
 irfp260n.pdf pdf_icon

IRFP260NPBF

PD - 94004A IRFP260N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.04 G Fully Avalanche Rated Ease of Paralleling ID = 50A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

 6.2. Size:594K  cn minos
 irfp260n.pdf pdf_icon

IRFP260NPBF

Silicon N-Channel Power MOSFET Description IRFP260N the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =200V, R

MOSTRAR MÁS

Otros transistores... IRFP250NPBF, IRFP250PBF, IRFP250R, IRFP252R, IRFP254N, IRFP254NPBF, IRFP254PBF, IRFP260MPBF, IRF9540N, IRFP260PBF, IRFP264NPBF, IRFP264PBF, IRFP26N60L, IRFP26N60LPBF, IRFP27N60K, IRFP27N60KPBF, IRFP2907PBF