IRFP260NPBF Datasheet. Specs and Replacement

Type Designator: IRFP260NPBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 603 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO247AC

IRFP260NPBF substitution

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IRFP260NPBF datasheet

 ..1. Size:180K  international rectifier
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IRFP260NPBF

PD - 95010A IRFP260NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.04 l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni... See More ⇒

 ..2. Size:212K  inchange semiconductor
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IRFP260NPBF

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP260NPBF FEATURES With TO-247 packaging Ease of paralleling High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

 6.1. Size:122K  international rectifier
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IRFP260NPBF

PD - 94004A IRFP260N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.04 G Fully Avalanche Rated Ease of Paralleling ID = 50A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme... See More ⇒

 6.2. Size:594K  cn minos
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IRFP260NPBF

Silicon N-Channel Power MOSFET Description IRFP260N the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =200V, R ... See More ⇒

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Detailed specifications: IRFP250NPBF, IRFP250PBF, IRFP250R, IRFP252R, IRFP254N, IRFP254NPBF, IRFP254PBF, IRFP260MPBF, IRF9540N, IRFP260PBF, IRFP264NPBF, IRFP264PBF, IRFP26N60L, IRFP26N60LPBF, IRFP27N60K, IRFP27N60KPBF, IRFP2907PBF

Keywords - IRFP260NPBF MOSFET specs

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