IRFP31N50L Todos los transistores

PD - 94081 SMPS MOSFET IRFP31N50L Applications HEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power Supply VDSS RDS(on) typ. ID High Speed Power Switching 500V 0.15 31A ZVS and High Frequency Circuit PWM Inverters Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterize

PD - 95051 SMPS MOSFET IRFP31N50LPbF AppIications HEXFET Power MOSFET Trr typ. VDSS RDS(on) typ. ID 500V 0.15 170ns 31A Features and Benefits

IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.15 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 210 COMPLIANT Requirements Qgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness

IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.15 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 210 COMPLIANT Requirements Qgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness

iscN-Channel MOSFET Transistor IRFP31N50L FEATURES Low drain-source on-resistance RDS(ON) =0.18 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

PD - 94360 IRFP32N50KS SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply (SMPS) VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135 32A Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterize

PD- 95715 IRFP354PbF Lead-Free www.irf.com 1 8/3/04 IRFP354PbF 2 www.irf.com IRFP354PbF www.irf.com 3 IRFP354PbF 4 www.irf.com IRFP354PbF www.irf.com 5 IRFP354PbF 6 www.irf.com IRFP354PbF www.irf.com 7 IRFP354PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE T HIS IS AN IRFPE30 WITH ASSEMBLY PART

Document Number 90292 www.vishay.com 1001 www.vishay.com Document Number 90292 1002 Document Number 90292 www.vishay.com 1003 Document Number 90292 www.vishay.com 1004 Document Number 90292 www.vishay.com 1005 Document Number 90292 www.vishay.com 1006 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc.,

PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 400V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.20 Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 23A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Synchronous Rectification 30V 0.0028 210A l Active ORing l Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 1

PD - 97128 IRFP3306PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt R

PD - 97126 IRFP3077PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 2.8m l Hard Switched and High Frequency Circuits max. 3.3m Benefits G l Worldwide Best RDS(on) in TO-247 ID (Silicon Limited) 200A c l Improved Gate, Avalanche and Dynamic dV/d

IRFP3006PbF VDSS 60V D RDS(on) typ. 2.1m max. 2.5m S G D 270A ID (Silicon Limited) G ID (Package Limited) 195A S TO-247AC Applications G D S High Efficiency Synchronous Rectification in SMPS Gate Drain Source Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved

PD - 95052 IRFP32N50KPbF SMPS MOSFET HEXFET Power MOSFET AppIications l Switch Mode Power Supply (SMPS) VDSS RDS(on)typ. ID l Uninterruptible Power Supply l High Speed Power Switching 500V 0.135 32A l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggednes

PD - 97127 IRFP3206PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.4m l Uninterruptible Power Supply l High Speed Power Switching max. 3.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 200A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D

PD - 95512 IRFP3415PbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 150V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.042 G l Lead-Free ID = 43A S Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resi

PD - 95053A IRFP3710PbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.025 G l Lead-Free Description ID = 57A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili

PD- 95714 IRFP350LCPbF Lead-Free 08/03/04 Document Number 91224 www.vishay.com 1 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number 91224 www.vishay.com 2 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number 91224 www.vishay.com 3 Downloaded from Elcodis.com electronic components distributor

PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 400V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.30 Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 16A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

PD - 93962 IRFP3415 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175 C Operating Temperature Fast Switching RDS(on) = 0.042 Fully Avalanche Rated G Description ID = 43A S Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a

PD - 94099A IRFP32N50K SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply (SMPS) VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135 32A Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterize

PD- 95712 IRFP340PbF Lead-Free 8/2/04 Document Number 91222 www.vishay.com 1 IRFP340PbF Document Number 91222 www.vishay.com 2 IRFP340PbF Document Number 91222 www.vishay.com 3 IRFP340PbF Document Number 91222 www.vishay.com 4 IRFP340PbF Document Number 91222 www.vishay.com 5 IRFP340PbF Document Number 91222 www.vishay.com 6 IRFP340PbF Peak Diode Recovery d

PD-91490C IRFP3710 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175 C Operating Temperature Fast Switching RDS(on) = 0.025W Fully Avalanche Rated G ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit

PD - 94877 IRFP350PbF Lead-Free 12/9/03 Document Number 91225 www.vishay.com 1 IRFP350PbF Document Number 91225 www.vishay.com 2 IRFP350PbF Document Number 91225 www.vishay.com 3 IRFP350PbF Document Number 91225 www.vishay.com 4 IRFP350PbF Document Number 91225 www.vishay.com 5 IRFP350PbF Document Number 91225 www.vishay.com 6 IRFP350PbF TO-247AC Package Ou

PD- 95713 IRFP344PbF Lead-Free 8/2/04 Document Number 91223 www.vishay.com 1 IRFP344PbF Document Number 91223 www.vishay.com 2 IRFP344PbF Document Number 91223 www.vishay.com 3 IRFP344PbF Document Number 91223 www.vishay.com 4 IRFP344PbF Document Number 91223 www.vishay.com 5 IRFP344PbF Document Number 91223 www.vishay.com 6 IRFP344PbF Document Number 9122

PD - 93917A IRFP3703 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Synchronous Rectification 30V 0.0028 210A Active ORing Benefits Ultra Low On-Resistance Low Gate Impedance to Reduce Switching Losses Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100

IRFP350A FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.254 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist

This datasheet has been downloaded from www.DatasheetCatalog.com Datasheets for electronic components.

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.254 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

This datasheet has been downloaded from www.DatasheetCatalog.com Datasheets for electronic components.

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input Capacitance ID = 11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.437 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.30 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 Fast Switching Qgs (nC) 23 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Lead

IRFP32N50K, SiHFP32N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.135 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 190 COMPLIANT Ruggedness Qgs (nC) 59 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 84 and Current Con

IRFP32N50K, SiHFP32N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.135 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 190 COMPLIANT Ruggedness Qgs (nC) 59 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 84 and Current Con

IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.20 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 110 Isolated Central Mounting Hole Qgs (nC) 28 Dynamic dV/dt Rated Qgd (nC) 45 Repetitive A

IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 62 COMPLIANT Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant

IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.20 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 30 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Lead (

IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.30 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 Fast Switching Qgs (nC) 23 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Compli

IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 62 COMPLIANT Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant

IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Available Reduced Gate Drive Requirement RDS(on) ( )VGS = 10 V 0.30 Enhanced 30V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 76 Isolated Central Mounting Hole Qgs (nC) 20 Dynamic dV/dt Rated Qgd (nC) 37 Repetitive Av

IRFP344, SiHFP344 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 450 Repetitive Avalanche Rated RoHS RDS(on) ( )VGS = 10 V 0.63 COMPLIANT Isolated Central Mounting Hole Qg (Max.) (nC) 80 Fast Switching Qgs (nC) 12 Ease of Paralleling Qgd (nC) 41 Simple Drive Requirements Configuration Single Lead (Pb)-free D

IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.20 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 30 Ease of Paralleling Qgd (nC) 110 Configuration Single Simple Drive Requirements Complia

IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.30 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 Fast Switching Qgs (nC) 23 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Compli

IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.20 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 30 Ease of Paralleling Qgd (nC) 110 Configuration Single Simple Drive Requirements Complia

isc N-Channel MOSFET Transistor IRFP351 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP360LC FEATURES With TO-247 packaging Uninterruptible power supply High speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour

isc N-Channel MOSFET Transistor IRFP353 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP342R FEATURES Drain Current ID= 8.7A@ TC=25 Drain Source Voltage- VDSS= 400V(Min) Static Drain-Source On-Resistance RDS(on) = 0.80 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA

isc N-Channel MOSFET Transistor IRFP3077 IIRFP3077 FEATURES Static drain-source on-resistance RDS(on) 3.3m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switc

isc N-Channel MOSFET Transistor IRFP3206 IIRFP3206 FEATURES Static drain-source on-resistance RDS(on) 3.0m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switc

isc N-Channel MOSFET Transistor IRFP3306 IIRFP3306 FEATURES Static drain-source on-resistance RDS(on) 4.2m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switc

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP343R FEATURES Drain Current ID= 8.7A@ TC=25 Drain Source Voltage- VDSS= 350V(Min) Static Drain-Source On-Resistance RDS(on) = 0.80 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP341R FEATURES Drain Current ID= 11A@ TC=25 Drain Source Voltage- VDSS= 350V(Min) Static Drain-Source On-Resistance RDS(on) = 0.55 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP340R FEATURES Drain Current ID= 11A@ TC=25 Drain Source Voltage- VDSS= 400V(Min) Static Drain-Source On-Resistance RDS(on) = 0.55 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

isc N-Channel MOSFET Transistor IRFP3006 IIRFP3006 FEATURES Static drain-source on-resistance RDS(on) 2.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Swit

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP352(R) FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP351(R) FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS

isc N-Channel MOSFET Transistor IRFP350A FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP353(R) FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS

isc N-Channel MOSFET Transistor IRFP340A FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies

isc N-Channel MOSFET ransistor IRFP350LC FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies

isc N-Channel MOSFET Transistor IRFP360PBF FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

isc N-Channel MOSFET Transistor IRFP3415 IIRFP3415 FEATURES Static drain-source on-resistance RDS(on) 42m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

isc N-Channel MOSFET Transistor IRFP352 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP32N50K FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

isc N-Channel MOSFET Transistor IRFP3207Z FEATURES Drain Current I = 170A@ T =25 D C Drain Source Voltage- V = 75V(Min) DSS Static Drain-Source On-Resistance R = 4.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High Speed Power Switching Hard Switched and High Frequency

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP350R FEATURES Drain Current ID= 16A@ TC=25 Drain Source Voltage- VDSS= 400V(Min) Static Drain-Source On-Resistance RDS(on) = 0.3 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI

isc N-Channel MOSFET Transistor IRFP3710 IIRFP3710 FEATURES Static drain-source on-resistance RDS(on) 25m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

isc N-Channel MOSFET ransistor IRFP350 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies an

isc N-Channel MOSFET Transistor IRFP3703 IIRFP3703 FEATURES Static drain-source on-resistance RDS(on) 2.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous Rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V