IRFP31N50L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP31N50L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 460 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 31 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 115 ns
Cossⓘ - Выходная емкость: 553 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
Тип корпуса: TO247AC
Аналог (замена) для IRFP31N50L
IRFP31N50L Datasheet (PDF)
irfp31n50l.pdf
PD - 94081SMPS MOSFETIRFP31N50LApplications HEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power SupplyVDSS RDS(on) typ. ID High Speed Power Switching500V 0.15 31A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterize
irfp31n50lpbf.pdf
PD - 95051SMPS MOSFETIRFP31N50LPbFAppIicationsHEXFET Power MOSFET Trr typ.VDSS RDS(on) typ. ID 500V 0.15 170ns 31A Features and Benefits
irfp31n50l sihfp31n50l.pdf
IRFP31N50L, SiHFP31N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.15RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 210COMPLIANTRequirementsQgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfp31n50l irfp31n50lpbf sihfp31n50l.pdf
IRFP31N50L, SiHFP31N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.15RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 210COMPLIANTRequirementsQgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfp31n50l.pdf
iscN-Channel MOSFET Transistor IRFP31N50LFEATURESLow drain-source on-resistance:RDS(ON) =0.18 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
irfp32n50ks.pdf
PD - 94360IRFP32N50KSSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135 32A Hard Switched and High FrequencyCircuitsBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterize
irfp354pbf.pdf
PD- 95715IRFP354PbF Lead-Freewww.irf.com 18/3/04IRFP354PbF2 www.irf.comIRFP354PbFwww.irf.com 3IRFP354PbF4 www.irf.comIRFP354PbFwww.irf.com 5IRFP354PbF6 www.irf.comIRFP354PbFwww.irf.com 7IRFP354PbFTO-247AC Package Outline Dimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH ASSEMBLY PART
irfp360.pdf
Document Number: 90292 www.vishay.com1001www.vishay.comDocument Number: 902921002Document Number: 90292 www.vishay.com1003Document Number: 90292www.vishay.com1004Document Number: 90292www.vishay.com1005Document Number: 90292www.vishay.com1006Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc.,
irfp360lc.pdf
PD - 9.1230IRFP360LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 400VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.20Dynamic dv/dt RatedRepetitive Avalanche RatedID = 23ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
irfp3703pbf.pdf
PD - 95481SMPS MOSFETIRFP3703PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Synchronous Rectification 30V 0.0028 210Al Active ORingl Lead-FreeBenefitsl Ultra Low On-Resistancel Low Gate Impedance to Reduce SwitchingLossesl Fully Avalanche RatedTO-247ACAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 1
irfp3306pbf.pdf
PD - 97128IRFP3306PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.3.3m:l Uninterruptible Power Supplyl High Speed Power Switchingmax. 4.2m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)160A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtR
irfp3077pbf.pdf
PD - 97126IRFP3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-247ID (Silicon Limited)200A cl Improved Gate, Avalanche and Dynamic dV/d
irfp3006.pdf
IRFP3006PbF VDSS 60V DRDS(on) typ. 2.1m max. 2.5m S GD 270A ID (Silicon Limited) G ID (Package Limited) 195A STO-247AC Applications G D S High Efficiency Synchronous Rectification in SMPS Gate Drain Source Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved
irfp32n50kpbf.pdf
PD - 95052IRFP32N50KPbFSMPS MOSFETHEXFET Power MOSFETAppIicationsl Switch Mode Power Supply (SMPS)VDSS RDS(on)typ. IDl Uninterruptible Power Supplyl High Speed Power Switching500V 0.135 32Al Hard Switched and High FrequencyCircuitsl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednes
irfp3206pbf.pdf
PD - 97127IRFP3206PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.4m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)200A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtD
irfp3415pbf.pdf
PD - 95512IRFP3415PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 0.042Gl Lead-FreeID = 43ASDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resi
irfp3710pbf.pdf
PD - 95053AIRFP3710PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.025Gl Lead-FreeDescription ID = 57ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per sili
irfp350lcpbf.pdf
PD- 95714IRFP350LCPbF Lead-Free08/03/04Document Number: 91224 www.vishay.com1Downloaded from Elcodis.com electronic components distributor IRFP350LCPbFDocument Number: 91224 www.vishay.com2Downloaded from Elcodis.com electronic components distributor IRFP350LCPbFDocument Number: 91224 www.vishay.com3Downloaded from Elcodis.com electronic components distributor
irfp350lc.pdf
PD - 9.1229IRFP350LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementVDSS = 400VEnhanced 30V Vgs RatingReduced Ciss, Coss, CrssRDS(on) = 0.30Isolated Central Mounting HoleDynamic dv/dt RatedRepetitive Avalanche Rated ID = 16ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
irfp3415.pdf
PD - 93962IRFP3415HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.042 Fully Avalanche RatedGDescription ID = 43ASFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance persilicon a
irfp32n50k.pdf
PD - 94099AIRFP32N50KSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135 32A Hard Switched and High FrequencyCircuitsBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterize
irfp340pbf.pdf
PD- 95712IRFP340PbF Lead-Free8/2/04Document Number: 91222 www.vishay.com1IRFP340PbFDocument Number: 91222 www.vishay.com2IRFP340PbFDocument Number: 91222 www.vishay.com3IRFP340PbFDocument Number: 91222 www.vishay.com4IRFP340PbFDocument Number: 91222 www.vishay.com5IRFP340PbFDocument Number: 91222 www.vishay.com6IRFP340PbFPeak Diode Recovery d
irfp3710.pdf
PD-91490CIRFP3710HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.025W Fully Avalanche RatedGID = 57ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit
irfp350.pdf
PD - 94877IRFP350PbF Lead-Free12/9/03Document Number: 91225 www.vishay.com1IRFP350PbFDocument Number: 91225 www.vishay.com2IRFP350PbFDocument Number: 91225 www.vishay.com3IRFP350PbFDocument Number: 91225 www.vishay.com4IRFP350PbFDocument Number: 91225 www.vishay.com5IRFP350PbFDocument Number: 91225 www.vishay.com6IRFP350PbFTO-247AC Package Ou
irfp344pbf.pdf
PD- 95713IRFP344PbF Lead-Free8/2/04Document Number: 91223 www.vishay.com1IRFP344PbFDocument Number: 91223 www.vishay.com2IRFP344PbFDocument Number: 91223 www.vishay.com3IRFP344PbFDocument Number: 91223 www.vishay.com4IRFP344PbFDocument Number: 91223 www.vishay.com5IRFP344PbFDocument Number: 91223 www.vishay.com6IRFP344PbFDocument Number: 9122
irfp3703.pdf
PD - 93917AIRFP3703SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Synchronous Rectification 30V 0.0028 210A Active ORingBenefits Ultra Low On-Resistance Low Gate Impedance to Reduce SwitchingLosses Fully Avalanche RatedTO-247ACAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100
irfp350a.pdf
IRFP350AFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current: 10A (Max.) @ VDS = 400V Low RDS(ON): 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characterist
irfp350-353.pdf
This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.
irfp350a.pdf
Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu
irfp350 irfp351 irfp352 irfp353.pdf
This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.
irfp340a.pdf
Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
irfp350pbf.pdf
IRFP350, SiHFP350Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.30RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 150 Fast SwitchingQgs (nC) 23 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Lead
irfp32n50k irfp32n50kpbf sihfp32n50k.pdf
IRFP32N50K, SiHFP32N50KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.135RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 190 COMPLIANTRuggednessQgs (nC) 59 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 84and CurrentCon
irfp32n50k sihfp32n50k.pdf
IRFP32N50K, SiHFP32N50KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.135RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 190 COMPLIANTRuggednessQgs (nC) 59 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 84and CurrentCon
irfp360lc sihfp360lc.pdf
IRFP360LC, SiHFP360LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.20 Enhanced 30 V VGS Rating RoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 110 Isolated Central Mounting HoleQgs (nC) 28 Dynamic dV/dt RatedQgd (nC) 45 Repetitive A
irfp340 sihfp340.pdf
IRFP340, SiHFP340Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 62 COMPLIANT Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant
irfp360pbf.pdf
IRFP360, SiHFP360Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.20RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 30Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive Requirements Lead (
irfp350 sihfp350.pdf
IRFP350, SiHFP350Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.30RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 150 Fast SwitchingQgs (nC) 23 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Compli
irfp340pbf sihfp340.pdf
IRFP340, SiHFP340Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 62 COMPLIANT Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant
irfp350lc sihfp350lc.pdf
IRFP350LC, SiHFP350LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400Available Reduced Gate Drive RequirementRDS(on) ()VGS = 10 V 0.30 Enhanced 30V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 76 Isolated Central Mounting HoleQgs (nC) 20 Dynamic dV/dt RatedQgd (nC) 37 Repetitive Av
irfp344pbf.pdf
IRFP344, SiHFP344Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 450 Repetitive Avalanche RatedRoHSRDS(on) ()VGS = 10 V 0.63COMPLIANT Isolated Central Mounting HoleQg (Max.) (nC) 80 Fast SwitchingQgs (nC) 12 Ease of ParallelingQgd (nC) 41 Simple Drive RequirementsConfiguration Single Lead (Pb)-freeD
irfp360 sihfp360.pdf
IRFP360, SiHFP360Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.20RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 30 Ease of ParallelingQgd (nC) 110Configuration Single Simple Drive Requirements Complia
irfp3703pbf.pdf
PD - 95481SMPS MOSFETIRFP3703PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Synchronous Rectification 30V 0.0028 210Al Active ORingl Lead-FreeBenefitsl Ultra Low On-Resistancel Low Gate Impedance to Reduce SwitchingLossesl Fully Avalanche RatedTO-247ACAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 1
irfp3306pbf.pdf
PD - 97128IRFP3306PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.3.3m:l Uninterruptible Power Supplyl High Speed Power Switchingmax. 4.2m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)160A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtR
irfp3077pbf.pdf
PD - 97126IRFP3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-247ID (Silicon Limited)200A cl Improved Gate, Avalanche and Dynamic dV/d
irfp3206pbf.pdf
PD - 97127IRFP3206PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.4m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)200A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtD
irfp3415pbf.pdf
PD - 95512IRFP3415PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 0.042Gl Lead-FreeID = 43ASDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resi
irfp3710pbf.pdf
PD - 95053AIRFP3710PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.025Gl Lead-FreeDescription ID = 57ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per sili
irfp350 sihfp350.pdf
IRFP350, SiHFP350Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.30RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 150 Fast SwitchingQgs (nC) 23 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Compli
irfp360 sihfp360.pdf
IRFP360, SiHFP360Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.20RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 30 Ease of ParallelingQgd (nC) 110Configuration Single Simple Drive Requirements Complia
irfp351.pdf
isc N-Channel MOSFET Transistor IRFP351FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a
irfp360lc.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP360LCFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour
irfp353.pdf
isc N-Channel MOSFET Transistor IRFP353FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a
irfp342r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP342R FEATURES Drain Current ID= 8.7A@ TC=25 Drain Source Voltage- : VDSS= 400V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.80(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA
irfp3077.pdf
isc N-Channel MOSFET Transistor IRFP3077IIRFP3077FEATURESStatic drain-source on-resistance:RDS(on)3.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switc
irfp3206.pdf
isc N-Channel MOSFET Transistor IRFP3206IIRFP3206FEATURESStatic drain-source on-resistance:RDS(on)3.0mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switc
irfp3306.pdf
isc N-Channel MOSFET Transistor IRFP3306IIRFP3306FEATURESStatic drain-source on-resistance:RDS(on)4.2mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switc
irfp343r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP343R FEATURES Drain Current ID= 8.7A@ TC=25 Drain Source Voltage- : VDSS= 350V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.80(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA
irfp341r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP341R FEATURES Drain Current ID= 11A@ TC=25 Drain Source Voltage- : VDSS= 350V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.55(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT
irfp340r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP340R FEATURES Drain Current ID= 11A@ TC=25 Drain Source Voltage- : VDSS= 400V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.55(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT
irfp3006.pdf
isc N-Channel MOSFET Transistor IRFP3006IIRFP3006FEATURESStatic drain-source on-resistance:RDS(on) 2.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Swit
irfp352r.pdf
INCHANGE Semiconductor isc Product Specificationisc N-Channel MOSFET Transistor IRFP352(R)FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast SwitchingDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS
irfp351r.pdf
INCHANGE Semiconductor isc Product Specificationisc N-Channel MOSFET Transistor IRFP351(R)FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast SwitchingDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS
irfp350a.pdf
isc N-Channel MOSFET Transistor IRFP350AFEATURESDrain Current I = 17A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies
irfp353r.pdf
INCHANGE Semiconductor isc Product Specificationisc N-Channel MOSFET Transistor IRFP353(R)FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast SwitchingDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS
irfp340a.pdf
isc N-Channel MOSFET Transistor IRFP340AFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies
irfp350lc.pdf
isc N-Channel MOSFET ransistor IRFP350LCFEATURESDrain Current I = 16A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies
irfp360pbf.pdf
isc N-Channel MOSFET Transistor IRFP360PBFFEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
irfp3415.pdf
isc N-Channel MOSFET Transistor IRFP3415IIRFP3415FEATURESStatic drain-source on-resistance:RDS(on)42mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
irfp352.pdf
isc N-Channel MOSFET Transistor IRFP352FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a
irfp32n50k.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP32N50KFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
irfp3207z.pdf
isc N-Channel MOSFET Transistor IRFP3207ZFEATURESDrain Current I = 170A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 4.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh Speed Power SwitchingHard Switched and High Frequency
irfp350r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP350R FEATURES Drain Current ID= 16A@ TC=25 Drain Source Voltage- : VDSS= 400V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.3(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI
irfp3710.pdf
isc N-Channel MOSFET Transistor IRFP3710IIRFP3710FEATURESStatic drain-source on-resistance:RDS(on)25mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
irfp350.pdf
isc N-Channel MOSFET ransistor IRFP350FEATURESDrain Current I = 16A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies an
irfp3703.pdf
isc N-Channel MOSFET Transistor IRFP3703IIRFP3703FEATURESStatic drain-source on-resistance:RDS(on)2.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 V
Другие MOSFET... IRFP26N60L , IRFP26N60LPBF , IRFP27N60K , IRFP27N60KPBF , IRFP2907PBF , IRFP2907ZPBF , IRFP3006 , IRFP3077PBF , CS150N03A8 , IRFP31N50LPBF , IRFP3206PBF , IRFP32N50K , IRFP32N50KPBF , IRFP3306PBF , IRFP340PBF , IXZR18N50B , IXZR18N50A .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F