IXTV230N085TS Todos los transistores

 ..1. Size:294K  ixys
 ixtv230n085ts.pdf

Preliminary Technical Information VDSS = 85 V IXTV230N085T TrenchMVTM ID25 = 230 A IXTV230N085TS Power MOSFET RDS(on) 4.4 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings PLUS220 (IXTV) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V G D D (TAB) S

 2.1. Size:296K  ixys
 ixtv230n085t.pdf

Preliminary Technical Information VDSS = 85 V IXTV230N085T TrenchMVTM ID25 = 230 A IXTV230N085TS Power MOSFET RDS(on) 4.4 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings PLUS220 (IXTV) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V G D D (TAB) S

 9.1. Size:230K  ixys
 ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf

IXTH26N60P VDSS = 600 V PolarHVTM IXTQ26N60P ID25 = 26 A Power MOSFET IXTT26N60P RDS(on) 270 m N-Channel Enhancement Mode IXTV26N60P Avalanche Rated TO-247 (IXTH) IXTV26N60PS G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGSS Continuous 30 V VGSM Tran

 9.2. Size:294K  ixys
 ixtv250n075t.pdf

Preliminary Technical Information IXTV250N075T VDSS = 75 V TrenchMVTM IXTV250N075TS ID25 = 250 A Power MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings PLUS220 (IXTV) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V G D D (TAB) S

 9.3. Size:295K  ixys
 ixtv280n055t.pdf

Preliminary Technical Information IXTV 280N055T VDSS = 55 V TrenchMVTM IXTV 280N055TS ID25 = 280 A Power MOSFET RDS(on) 3.2 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings PLUS220 (IXTV) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V G D D (TAB)

 9.4. Size:338K  ixys
 ixtq26n50p ixtt26n50p ixtv26n50p.pdf

IXTQ 26N50P VDSS = 500 V PolarHVTM IXTT 26N50P ID25 = 26 A Power MOSFET IXTV 26N50P RDS(on) 230 m IXTV 26N50PS N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 500 V D S D (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V TO-268 (IXTT) VGSS Continuos 30 V

 9.5. Size:198K  ixys
 ixth22n50p ixtq22n50p ixtv22n50p.pdf

IXTH 22N50P VDSS = 500 V PolarHVTM IXTQ 22N50P ID25 = 22 A Power MOSFET IXTV 22N50P RDS(on) 270 m N-Channel Enhancement Mode IXTV 22N50PS Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 150 C 500 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V TO-3P (IXTQ) VGSM Trans

 9.6. Size:314K  ixys
 ixtq22n60p ixtv22n60p.pdf

IXTQ 22N60P VDSS = 600 V PolarHVTM IXTV 22N60P ID25 = 22 A Power MOSFET IXTV 22N60PS RDS (on) 350 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 30 V G D (TAB) S VGSM Tranisent 40 V ID25