IXTT1N300P3HV MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTT1N300P3HV

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 195 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 3000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 48 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm

Encapsulados: TO-268HV

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IXTT1N300P3HV datasheet

 ..1. Size:208K  ixys
 ixth1n300p3hv ixtt1n300p3hv.pdf pdf_icon

IXTT1N300P3HV

Preliminary Technical Information High Voltage VDSS = 3000V IXTT1N300P3HV Power MOSFET ID25 = 1.00A IXTH1N300P3HV RDS(on) 50 N-Channel Enhancement Mode TO-268HV (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 3000 V TO-247HV (IXTH) VDGR TJ = 25 C to 150 C, RGS = 1M 3000 V VGSS

 8.1. Size:155K  ixys
 ixtt1n450hv.pdf pdf_icon

IXTT1N300P3HV

Advance Technical Information High Voltage VDSS = 4500V IXTT1N450HV Power MOSFET ID25 = 1A RDS(on) 85 N-Channel Enhancement Mode TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 4500 V VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V G = Gate D = Drain S = Source Tab = Drain VGSS Continuous 20 V VGSM

 8.2. Size:73K  ixys
 ixth1n100 ixtt1n100.pdf pdf_icon

IXTT1N300P3HV

Advance Technical Information VDSS = 1000 V IXTH 1N100 High Voltage MOSFET ID25 = 1.5 A IXTT 1N100 RDS(on) = 11 N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC

 8.3. Size:152K  ixys
 ixtt1n250hv.pdf pdf_icon

IXTT1N300P3HV

Advance Technical Information High Voltage VDSS = 2500V IXTT1N250HV ID25 = 1.5A Power MOSFET RDS(on) 40 N-Channel Enhancement Mode Fast Intrinsic Diode TO-268S G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 2500 V G = Gate D = Drain S = Source Tab = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 2500 V VGSS Contin

MOSTRAR MÁS

Otros transistores... IXTX102N65X2, IXTV230N085TS, IXTT6N150, IXTT4N150HV, IXTT3N200P3HV, IXTT2N300P3HV, IXTT2N170D2, IXTT1N450HV, IRLB3034, IXTT1N250HV, IXTT140P10T, IXTT12N150HV, IXTT12N150, IXTT02N450HV, IXTR68P20T, IXTR210P10T, IXTR140P10T