IXTQ80N28T Todos los transistores

 

IXTQ80N28T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTQ80N28T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 500 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 280 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 510 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.049 Ohm
   Paquete / Cubierta: TO-3P
 

 Búsqueda de reemplazo de IXTQ80N28T MOSFET

   - Selección ⓘ de transistores por parámetros

 

IXTQ80N28T Datasheet (PDF)

 ..1. Size:90K  ixys
 ixtq80n28t.pdf pdf_icon

IXTQ80N28T

Advance Technical Infomation IXTQ 80N28TIXTQ 80N28T VDSS = 280 VTrench GateID25 = 80 APower MOSFETRDS(on) = 49 mN-Channel Enhancement ModeFor Plasma Display ApplicationsSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 150C 280 VVDGR TJ = 25C to 150C; RGS = 1 M 280 VVGSM 30 VID25 TC = 25C80 AGIDRMS External lead cu

 9.1. Size:324K  ixys
 ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf pdf_icon

IXTQ80N28T

IXTH 88N30P VDSS = 300 VPolarHTTMIXTK 88N30P ID25 = 88 APower MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30PN-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsD (TAB)GDVDSS TJ = 25 C to 150 C 300 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuous 20 VTO-264 (IXTK)

 9.2. Size:159K  ixys
 ixtt82n25p ixtq82n25p ixtk82n25p.pdf pdf_icon

IXTQ80N28T

VDSS = 250VIXTT82N25PPolarTMID25 = 82AIXTQ82N25PPower MOSFET RDS(on) 38m IXTK82N25PTO-268 (IXTT)N-Channel Enhancement ModeGAvalanche RatedSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 250 VTO-3P( IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 250 VVGSS Continuous 20 VGVGSM Transient

 9.3. Size:294K  ixys
 ixtk82n25p ixtq82n25p ixtt82n25p.pdf pdf_icon

IXTQ80N28T

IXTK 82N25P VDSS = 250 VPolarHTTMIXTQ 82N25P ID25 = 82 APower MOSFET IXTT 82N25P RDS(on) 35 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25

MOSTRAR MÁS

Otros transistores... IXTT12N150HV , IXTT12N150 , IXTT02N450HV , IXTR68P20T , IXTR210P10T , IXTR140P10T , IXTR120P20T , IXTR102N65X2 , IRFP064N , IXTQ32N65X , IXTQ180N055T , IXTQ130N20T , IXTP8N65X2M , IXTP8N65X2 , IXTP80N075L2 , IXTP7N50A , IXTP7N50 .

History: IRFR9111 | IXTP52P10P | APT8067HVR

 

 
Back to Top

 


 
.