Справочник MOSFET. IXTQ80N28T

 

IXTQ80N28T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXTQ80N28T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 500 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 280 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 115 nC
   trⓘ - Время нарастания: 47 ns
   Cossⓘ - Выходная емкость: 510 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.049 Ohm
   Тип корпуса: TO-3P

 Аналог (замена) для IXTQ80N28T

 

 

IXTQ80N28T Datasheet (PDF)

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IXTQ80N28T IXTQ80N28T

Advance Technical Infomation IXTQ 80N28TIXTQ 80N28T VDSS = 280 VTrench GateID25 = 80 APower MOSFETRDS(on) = 49 mN-Channel Enhancement ModeFor Plasma Display ApplicationsSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 150C 280 VVDGR TJ = 25C to 150C; RGS = 1 M 280 VVGSM 30 VID25 TC = 25C80 AGIDRMS External lead cu

 9.1. Size:324K  ixys
 ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf

IXTQ80N28T IXTQ80N28T

IXTH 88N30P VDSS = 300 VPolarHTTMIXTK 88N30P ID25 = 88 APower MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30PN-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsD (TAB)GDVDSS TJ = 25 C to 150 C 300 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuous 20 VTO-264 (IXTK)

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 ixtt82n25p ixtq82n25p ixtk82n25p.pdf

IXTQ80N28T IXTQ80N28T

VDSS = 250VIXTT82N25PPolarTMID25 = 82AIXTQ82N25PPower MOSFET RDS(on) 38m IXTK82N25PTO-268 (IXTT)N-Channel Enhancement ModeGAvalanche RatedSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 250 VTO-3P( IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 250 VVGSS Continuous 20 VGVGSM Transient

 9.3. Size:294K  ixys
 ixtk82n25p ixtq82n25p ixtt82n25p.pdf

IXTQ80N28T IXTQ80N28T

IXTK 82N25P VDSS = 250 VPolarHTTMIXTQ 82N25P ID25 = 82 APower MOSFET IXTT 82N25P RDS(on) 35 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25

 9.4. Size:365K  ixys
 ixth88n30p ixtk88n30p ixtq88n30p ixtt88n30p.pdf

IXTQ80N28T IXTQ80N28T

IXTH 88N30P VDSS = 300 VPolarHTTMIXTK 88N30P ID25 = 88 APower MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30PN-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsD (TAB)GDVDSS TJ = 25 C to 150 C 300 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuous 20 VTO-264 (IXTK)

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History: IXTQ74N20P

 

 
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