IXTQ180N055T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTQ180N055T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 360 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 180 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 61 nS

Cossⓘ - Capacitancia de salida: 1190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO-3P

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IXTQ180N055T datasheet

 ..1. Size:108K  ixys
 ixta180n055t ixtp180n055t ixtq180n055t.pdf pdf_icon

IXTQ180N055T

Advance Technical Information IXTQ 180N055T VDSS = 55 V Trench Gate IXTA 180N055T ID25 = 180 A Power MOSFET IXTP 180N055T RDS(on) = 4.0 m N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C55 V G VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V D (TAB) S VGSM 20 V TO-220 (IXTP) ID25 TC = 25 C 180 A IDRM

 5.1. Size:203K  ixys
 ixth180n085t ixtq180n085t.pdf pdf_icon

IXTQ180N055T

Preliminary Technical Information IXTH180N085T VDSS = 85 V TrenchMVTM IXTQ180N085T ID25 = 180 A Power MOSFET RDS(on) 5.5 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V TO-

 6.1. Size:205K  ixys
 ixth180n10t ixtq180n10t.pdf pdf_icon

IXTQ180N055T

Preliminary Technical Information IXTH180N10T VDSS = 100 V TrenchMVTM IXTQ180N10T ID25 = 180 A Power MOSFET RDS(on) 6.4 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C 100 V S VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V TO

 8.1. Size:211K  ixys
 ixth182n055t ixtq182n055t.pdf pdf_icon

IXTQ180N055T

Preliminary Technical Information IXTH182N055T VDSS = 55 V TrenchMVTM IXTQ182N055T ID25 = 182 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V TO-3P

MOSTRAR MÁS

Otros transistores... IXTT02N450HV, IXTR68P20T, IXTR210P10T, IXTR140P10T, IXTR120P20T, IXTR102N65X2, IXTQ80N28T, IXTQ32N65X, IRF730, IXTQ130N20T, IXTP8N65X2M, IXTP8N65X2, IXTP80N075L2, IXTP7N50A, IXTP7N50, IXTP7N45A, IXTP7N45