IXTQ180N055T Specs and Replacement

Type Designator: IXTQ180N055T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 360 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 1190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO-3P

IXTQ180N055T substitution

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IXTQ180N055T datasheet

 ..1. Size:108K  ixys
 ixta180n055t ixtp180n055t ixtq180n055t.pdf pdf_icon

IXTQ180N055T

Advance Technical Information IXTQ 180N055T VDSS = 55 V Trench Gate IXTA 180N055T ID25 = 180 A Power MOSFET IXTP 180N055T RDS(on) = 4.0 m N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C55 V G VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V D (TAB) S VGSM 20 V TO-220 (IXTP) ID25 TC = 25 C 180 A IDRM... See More ⇒

 5.1. Size:203K  ixys
 ixth180n085t ixtq180n085t.pdf pdf_icon

IXTQ180N055T

Preliminary Technical Information IXTH180N085T VDSS = 85 V TrenchMVTM IXTQ180N085T ID25 = 180 A Power MOSFET RDS(on) 5.5 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V TO-... See More ⇒

 6.1. Size:205K  ixys
 ixth180n10t ixtq180n10t.pdf pdf_icon

IXTQ180N055T

Preliminary Technical Information IXTH180N10T VDSS = 100 V TrenchMVTM IXTQ180N10T ID25 = 180 A Power MOSFET RDS(on) 6.4 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C 100 V S VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V TO... See More ⇒

 8.1. Size:211K  ixys
 ixth182n055t ixtq182n055t.pdf pdf_icon

IXTQ180N055T

Preliminary Technical Information IXTH182N055T VDSS = 55 V TrenchMVTM IXTQ182N055T ID25 = 182 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V TO-3P ... See More ⇒

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Detailed specifications: IXTT02N450HV, IXTR68P20T, IXTR210P10T, IXTR140P10T, IXTR120P20T, IXTR102N65X2, IXTQ80N28T, IXTQ32N65X, IRF730, IXTQ130N20T, IXTP8N65X2M, IXTP8N65X2, IXTP80N075L2, IXTP7N50A, IXTP7N50, IXTP7N45A, IXTP7N45

Keywords - IXTQ180N055T MOSFET specs

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