IXTP80N075L2 Todos los transistores

 

IXTP80N075L2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTP80N075L2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 357 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 935 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: TO-220AB
     - Selección de transistores por parámetros

 

IXTP80N075L2 Datasheet (PDF)

 ..1. Size:168K  ixys
 ixta80n075l2 ixth80n075l2 ixtp80n075l2.pdf pdf_icon

IXTP80N075L2

Advance Technical InformationLinearL2TM Power VDSS = 75VIXTA80N075L2MOSFETs w/Extended ID25 = 80AIXTP80N075L2 RDS(on) 24m FBSOAIXTH80N075L2N-Channel Enhancement ModeTO-263AA (IXTA)Guaranteed FBSOAAvalanche RatedGSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 75 VVDGR TJ = 25

 7.1. Size:184K  ixys
 ixta80n10t ixtp80n10t.pdf pdf_icon

IXTP80N075L2

TrenchMVTM VDSS = 100VIXTA80N10TPower MOSFET ID25 = 80AIXTP80N10T RDS(on) 14m N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C, RGS = 1M 100 VTO-220AB (IXTP)VGSS Continuous 20 VVGSM Transien

 7.2. Size:305K  cn vbsemi
 ixtp80n12t2.pdf pdf_icon

IXTP80N075L2

IXTP80N12T2www.VBsemi.comN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0085 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC850.0100 at VGS = 6 VTO-220ABD TO-263G DRAIN connected to TAB G D S Top ViewS G D S Top ViewN-Channel

 7.3. Size:206K  inchange semiconductor
 ixtp80n12t2.pdf pdf_icon

IXTP80N075L2

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXTP80N12T2FEATURESDrain-Source On-Resistance: R

MOSTRAR MÁS

Otros transistores... IXTR120P20T , IXTR102N65X2 , IXTQ80N28T , IXTQ32N65X , IXTQ180N055T , IXTQ130N20T , IXTP8N65X2M , IXTP8N65X2 , 20N60 , IXTP7N50A , IXTP7N50 , IXTP7N45A , IXTP7N45 , IXTP6N60A , IXTP6N60 , IXTP64N10L2 , IXTP4N95A .

History: IXTP50N28T | 3SK249

 

 
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