IXTP180N055T Todos los transistores

 

IXTP180N055T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTP180N055T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 360 W
   Voltaje máximo drenador - fuente |Vds|: 55 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 180 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 61 nS
   Conductancia de drenaje-sustrato (Cd): 1190 pF
   Resistencia entre drenaje y fuente RDS(on): 0.004 Ohm
   Paquete / Cubierta: TO-220

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IXTP180N055T Datasheet (PDF)

 ..1. Size:108K  ixys
ixta180n055t ixtp180n055t ixtq180n055t.pdf

IXTP180N055T
IXTP180N055T

Advance Technical InformationIXTQ 180N055T VDSS = 55 VTrench GateIXTA 180N055T ID25 = 180 APower MOSFETIXTP 180N055T RDS(on) = 4.0 mN-Channel Enhancement ModeTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C55 VGVDGR TJ = 25C to 175C; RGS = 1 M 55 VD(TAB)SVGSM 20 VTO-220 (IXTP)ID25 TC = 25C 180 AIDRM

 5.1. Size:214K  ixys
ixta180n085t ixtp180n085t.pdf

IXTP180N055T
IXTP180N055T

Preliminary Technical InformationIXTA180N085T VDSS = 85 VTrenchMVTMIXTP180N085T ID25 = 180 APower MOSFET RDS(on) 5.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25 T

 6.1. Size:154K  ixys
ixta180n10t ixtp180n10t.pdf

IXTP180N055T
IXTP180N055T

IXTA180N10T VDSS = 100VTrenchMVTMIXTP180N10T ID25 = 180APower MOSFET RDS(on) 6.4m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 175C 100 VTO-220 (IXTP)VDGR TJ = 25C to 175C, RGS = 1M 100 VVGSM Transient 30 VID25 TC = 25C 180 AILRMS Lead Cur

 8.1. Size:221K  ixys
ixta182n055t ixtp182n055t.pdf

IXTP180N055T
IXTP180N055T

Preliminary Technical InformationIXTA182N055T VDSS = 55 VTrenchMVTMIXTP182N055T ID25 = 182 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 T

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