All MOSFET. IXTP180N055T Datasheet

 

IXTP180N055T MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTP180N055T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 160 nC
   trⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 1190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-220

 IXTP180N055T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTP180N055T Datasheet (PDF)

 ..1. Size:108K  ixys
 ixta180n055t ixtp180n055t ixtq180n055t.pdf

IXTP180N055T IXTP180N055T

Advance Technical InformationIXTQ 180N055T VDSS = 55 VTrench GateIXTA 180N055T ID25 = 180 APower MOSFETIXTP 180N055T RDS(on) = 4.0 mN-Channel Enhancement ModeTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C55 VGVDGR TJ = 25C to 175C; RGS = 1 M 55 VD(TAB)SVGSM 20 VTO-220 (IXTP)ID25 TC = 25C 180 AIDRM

 5.1. Size:214K  ixys
 ixta180n085t ixtp180n085t.pdf

IXTP180N055T IXTP180N055T

Preliminary Technical InformationIXTA180N085T VDSS = 85 VTrenchMVTMIXTP180N085T ID25 = 180 APower MOSFET RDS(on) 5.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25 T

 6.1. Size:154K  ixys
 ixta180n10t ixtp180n10t.pdf

IXTP180N055T IXTP180N055T

IXTA180N10T VDSS = 100VTrenchMVTMIXTP180N10T ID25 = 180APower MOSFET RDS(on) 6.4m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 175C 100 VTO-220 (IXTP)VDGR TJ = 25C to 175C, RGS = 1M 100 VVGSM Transient 30 VID25 TC = 25C 180 AILRMS Lead Cur

 8.1. Size:221K  ixys
 ixta182n055t ixtp182n055t.pdf

IXTP180N055T IXTP180N055T

Preliminary Technical InformationIXTA182N055T VDSS = 55 VTrenchMVTMIXTP182N055T ID25 = 182 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 T

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SUN50A20CI

 

 
Back to Top