IRFP244 Todos los transistores

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PD - 95313 IRFP244PbF Lead-Free 6/1/04 Document Number 91211 www.vishay.com 1 IRFP244PbF Document Number 91211 www.vishay.com 2 IRFP244PbF Document Number 91211 www.vishay.com 3 IRFP244PbF Document Number 91211 www.vishay.com 4 IRFP244PbF Document Number 91211 www.vishay.com 5 IRFP244PbF Document Number 91211 www.vishay.com 6 IRFP244PbF TO-247AC Package Out... See More ⇒

IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.28 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 39 Compliant to RoHS Directive 2002/95/EC Configuration... See More ⇒

IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.28 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 39 Compliant to RoHS Directive 2002/95/EC Configuration... See More ⇒

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IRFP244, IRFP245, Semiconductor IRFP246, IRFP247 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, July 1998 N-Channel Power MOSFETs Features Description 15A and 14A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.28 and 0.34 MOSFETs designed, tested, and guaranteed to withstand a specified... See More ⇒

PD - 95006 IRFP240PbF Lead-Free 2/11/04 Document Number 91210 www.vishay.com 1 IRP240PbF www.vishay.com Document Number 91210 2 IRFP240PbF Document Number 91210 www.vishay.com 3 IRP240PbF Document Number 91210 www.vishay.com 4 IRFP240PbF Document Number 91210 www.vishay.com 5 IRP240PbF Document Number 91210 www.vishay.com 6 IRFP240PbF TO-247AC Package Outl... See More ⇒

Preliminary Data Sheet PD - 9.1251 IRFP2410 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating VDSS = 100V Repetitive Avalanche Rated 175 C Operating Temperature RDS(on) = 0.025 Fast Switching Ease of Paralleling ID = 61A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi... See More ⇒

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Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input Capacitance ID = 20 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.144 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va... See More ⇒

IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.18 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 70 Fast Switching Qgs (nC) 13 Ease of Paralleling Qgd (nC) 39 Simple Drive Requirements Configuration Single Compli... See More ⇒

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP242R FEATURES Drain Current ID= 18A@ TC=25 Drain Source Voltage- VDSS= 200V(Min) Static Drain-Source On-Resistance RDS(on) = 0.22 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT... See More ⇒

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP240R FEATURES Drain Current ID= 20A@ TC=25 Drain Source Voltage- VDSS= 200V(Min) Static Drain-Source On-Resistance RDS(on) = 0.18 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT... See More ⇒