IRFP244 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP244
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 150 W
Tensión drenaje-fuente |Vds|: 250 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 4 V
Carga de compuerta (Qg): 63(max) nC
Tiempo de elevación (tr): 49 nS
Conductancia de drenaje-sustrato (Cd): 320 pF
Resistencia drenaje-fuente RDS(on): 0.28 Ohm
Empaquetado / Estuche: TO247AC
Búsqueda de reemplazo de MOSFET IRFP244
IRFP244 Datasheet (PDF)
0.1. irfp244pbf.pdf 
Size:240K _international_rectifier
PD - 95313IRFP244PbF Lead-Free6/1/04Document Number: 91211 www.vishay.com1IRFP244PbFDocument Number: 91211 www.vishay.com2IRFP244PbFDocument Number: 91211 www.vishay.com3IRFP244PbFDocument Number: 91211 www.vishay.com4IRFP244PbFDocument Number: 91211 www.vishay.com5IRFP244PbFDocument Number: 91211 www.vishay.com6IRFP244PbFTO-247AC Package Out
0.2. irfp244.pdf Size:167K _international_rectifier
0.3. irfp244a.pdf Size:206K _samsung
0.4. irfp244 sihfp244.pdf Size:902K _vishay
IRFP244, SiHFP244Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 39 Compliant to RoHS Directive 2002/95/ECConfiguration
0.5. irfp244 sihfp244.pdf Size:907K _infineon
IRFP244, SiHFP244Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 39 Compliant to RoHS Directive 2002/95/ECConfiguration
0.6. irfp244-247.pdf Size:72K _harris_semi
IRFP244, IRFP245,SemiconductorIRFP246, IRFP24715A and 14A, 275V and 250V, 0.28 and 0.34 Ohm,July 1998 N-Channel Power MOSFETsFeatures Description 15A and 14A, 275V and 250V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.28 and 0.34MOSFETs designed, tested, and guaranteed to withstand aspecified
Otros transistores... IRFP233 , APT50M38JLL , IRFP240 , IRFP240A , IRFP240FI , IRFP241 , IRFP242 , IRFP243 , IRF640 , IRFP244A , IRFP245 , IRFP250 , IRFP250A , IRFP251 , IRFP252 , IRFP253 , IRFP254 .
