IRFP244 Datasheet and Replacement

PD - 95313IRFP244PbF Lead-Free6/1/04Document Number: 91211 www.vishay.com1IRFP244PbFDocument Number: 91211 www.vishay.com2IRFP244PbFDocument Number: 91211 www.vishay.com3IRFP244PbFDocument Number: 91211 www.vishay.com4IRFP244PbFDocument Number: 91211 www.vishay.com5IRFP244PbFDocument Number: 91211 www.vishay.com6IRFP244PbFTO-247AC Package Out

IRFP244, SiHFP244Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 39 Compliant to RoHS Directive 2002/95/ECConfiguration

IRFP244, SiHFP244Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 39 Compliant to RoHS Directive 2002/95/ECConfiguration

IRFP244, IRFP245,SemiconductorIRFP246, IRFP24715A and 14A, 275V and 250V, 0.28 and 0.34 Ohm,July 1998 N-Channel Power MOSFETsFeatures Description 15A and 14A, 275V and 250V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.28 and 0.34MOSFETs designed, tested, and guaranteed to withstand aspecified

PD - 95006IRFP240PbF Lead-Free2/11/04Document Number: 91210 www.vishay.com1IRP240PbFwww.vishay.comDocument Number: 912102IRFP240PbFDocument Number: 91210 www.vishay.com3IRP240PbFDocument Number: 91210 www.vishay.com4IRFP240PbFDocument Number: 91210 www.vishay.com5IRP240PbFDocument Number: 91210 www.vishay.com6IRFP240PbFTO-247AC Package Outl

Preliminary Data Sheet PD - 9.1251IRFP2410HEXFET Power MOSFETAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating VDSS = 100VRepetitive Avalanche Rated175C Operating TemperatureRDS(on) = 0.025Fast SwitchingEase of ParallelingID = 61ADescriptionFourth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achi

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 20 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

IRFP240, SiHFP240Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.18RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 70 Fast SwitchingQgs (nC) 13 Ease of ParallelingQgd (nC) 39 Simple Drive RequirementsConfiguration Single Compli

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP242R FEATURES Drain Current ID= 18A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.22(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP240R FEATURES Drain Current ID= 20A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.18(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT