IXTK102N65X2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTK102N65X2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1040 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 102 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 6100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: TO-264P

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IXTK102N65X2 datasheet

 ..1. Size:193K  ixys
 ixtk102n65x2 ixtx102n65x2.pdf pdf_icon

IXTK102N65X2

Preliminary Technical Information X2-Class VDSS = 650V IXTK102N65X2 Power MOSFET ID25 = 102A IXTX102N65X2 RDS(on) 30m N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Contin

 6.1. Size:225K  ixys
 ixtk102n30p.pdf pdf_icon

IXTK102N65X2

VDSS = 300 V IXTK 102N30P PolarHTTM ID25 = 102 A Power MOSFET RDS(on) 33 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGSS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 102 A D (TAB) S ID(

 6.2. Size:261K  inchange semiconductor
 ixtk102n30p.pdf pdf_icon

IXTK102N65X2

Isc N-Channel MOSFET Transistor IXTK102N30P FEATURES With To-3PL package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

 8.1. Size:274K  ixys
 ixtk100n25p ixtt100n25p ixtq100n25p.pdf pdf_icon

IXTK102N65X2

IXTK 100N25P VDSS = 250 V PolarHTTM IXTQ 100N25P ID25 = 100 A Power MOSFET IXTT 100N25P RDS(on) 27 m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGSS Continuous 20 V G D (TAB) DS VGSM Transient 30 V ID

MOSTRAR MÁS

Otros transistores... IXTL2X220N075T, IXTL2X200N085T, IXTL2X180N10T, IXTL2N450, IXTK210P10T, IXTK20N150, IXTK120P20T, IXTK120N65X2, IRF830, IXTJ6N150, IXTJ4N150, IXTJ3N150, IXTI76N25T, IXTI12N50P, IXTI10N60P, IXTH80N65X2, IXTH80N075L2