IXTH1N300P3HV Todos los transistores

 

IXTH1N300P3HV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTH1N300P3HV
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 195 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 3000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 48 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
   Paquete / Cubierta: TO-247HV
 

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IXTH1N300P3HV Datasheet (PDF)

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 ixth1n300p3hv ixtt1n300p3hv.pdf pdf_icon

IXTH1N300P3HV

Preliminary Technical InformationHigh Voltage VDSS = 3000VIXTT1N300P3HVPower MOSFETID25 = 1.00AIXTH1N300P3HV RDS(on) 50 N-Channel Enhancement ModeTO-268HV (IXTT)GS D (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 3000 VTO-247HV (IXTH)VDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS

 8.1. Size:206K  ixys
 ixth1n450hv.pdf pdf_icon

IXTH1N300P3HV

High Voltage VDSS = 4500VIXTT1N450HVPower MOSFETID25 = 1AIXTH1N450HV RDS(on) 80 N-Channel Enhancement ModeTO-268HV (IXTT)GS D (Tab)Symbol Test Conditions Maximum RatingsTO-247HV (IXTH)VDSS TJ = 25C to 150C 4500 VVDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 VVGSM Transient 30

 8.2. Size:238K  ixys
 ixta1n170dhv ixth1n170dhv.pdf pdf_icon

IXTH1N300P3HV

Advance Technical InformationDepletion Mode VDSX = 1700VIXTA1N170DHVMOSFET ID(on) > 1AIXTH1N170DHV RDS(on) 16 N-ChannelTO-263HV (IXTA)GS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1700 VVDGX TJ = 25C to 150C, RGS = 1M 1700 VVGSX Continuous 20 VVGSM Transient 30 V

 8.3. Size:252K  ixys
 ixta1n200p3hv ixth1n200p3 ixth1n200p3hv.pdf pdf_icon

IXTH1N300P3HV

Preliminary Technical InformationHigh Voltage VDSS = 2000VIXTA1N200P3HVPower MOSFETID25 = 1.0AIXTH1N200P3HV RDS(on) 40 IXTH1N200P3N-Channel Enhancement ModeTO-263HV (IXTA)GS D (Tab)Symbol Test Conditions Maximum RatingsTO-247HV (IXTH)VDSS TJ = 25C to 150C 2000 VVDGR TJ = 25C to 150C, RGS = 1M

MOSTRAR MÁS

Otros transistores... IXTH2N170D2 , IXTH2N150L , IXTH2N150 , IXTH270N04T4 , IXTH20N65X , IXTH1R8N220P3HV , IXTH1R4N250P3 , IXTH1N450HV , IRF640N , IXTH1N200P3HV , IXTH1N200P3 , IXTH1N170DHV , IXTH15N70 , IXTH15N50A , IXTH15N45A , IXTH140P10T , IXTH12N65X2 .

History: CJS8810 | 2SK2074 | SPW20N60C3 | AUIRFR2307ZTR | BRCS250N10SDP | 36N06 | 6N60KL-TA3-T

 

 
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