IXTH05N250P3HV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXTH05N250P3HV
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 2500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 24 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 110 Ohm
   Paquete / Cubierta: TO-247HV

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IXTH05N250P3HV Datasheet (PDF)

..1. Size:160K ixys
ixth05n250p3hv.pdf

Advance Technical InformationHigh Voltage VDSS = 2500VIXTH05N250P3HVPower MOSFETID25 = 0.50A RDS(on) 110 N-Channel Enhancement ModeTO-247HVSymbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 2500 V D (Tab)DVDGR TJ = 25C to 150C, RGS = 1M 2500 VVGSS Continuous 20 VG = Gate D = Drai

9.1. Size:160K ixys
ixth04n300p3hv.pdf

Advance Technical InformationHigh Voltage VDSS = 3000VIXTH04N300P3HVPower MOSFETID25 = 0.40A RDS(on) 190 N-Channel Enhancement ModeTO-247HVSymbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 3000 V D (Tab)DVDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS Continuous 20 VG = Gate D = Drai

9.2. Size:194K ixys
ixth02n250 ixtv02n250s.pdf

High VoltageIXTH02N250VDSS = 2500VPower MOSFETsID25 = 200mA IXTV02N250S RDS(on) 450 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247 (IXTH)GD D (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2500 VPLUS220SMD (IXTV_S)VDGR TJ = 25C to 150C, RGS = 1M 2500 VVGSS Continuous 20 VVGSM Transient

9.3. Size:208K ixys
ixth02n450hv.pdf

High Voltage VDSS = 4500VIXTT02N450HVPower MOSFETID25 = 200mAIXTH02N450HV RDS(on) 625 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 4500 VVDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 VVGSM Transient

9.4. Size:161K ixys
ixth06n220p3hv.pdf

Advance Technical InformationHigh Voltage VDSS = 2200VIXTH06N220P3HVPower MOSFETID25 = 0.60A RDS(on) 80 N-Channel Enhancement ModeTO-247HVSymbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 2200 V D (Tab)DVDGR TJ = 25C to 150C, RGS = 1M 2200 VVGSS Continuous 20 VG = Gate D = Drain

9.5. Size:186K ixys
ixth03n400 ixtv03n400s.pdf

Advance Technical InformationHigh Voltage VDSS = 4000VIXTH03N400ID25 = 300mAPower MOSFET IXTV03N400S RDS(on) 290 N-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 4000 VDD (Tab)SVDGR TJ = 25C to 150C, RGS = 1M 4000 VVGSS Continuous 20 VVGSM Transie

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