IXTH05N250P3HV MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXTH05N250P3HV
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 104 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 2500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 10.5 nC
trⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 24 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 110 Ohm
Тип корпуса: TO-247HV
Аналог (замена) для IXTH05N250P3HV
IXTH05N250P3HV Datasheet (PDF)
ixth05n250p3hv.pdf
Advance Technical InformationHigh Voltage VDSS = 2500VIXTH05N250P3HVPower MOSFETID25 = 0.50A RDS(on) 110 N-Channel Enhancement ModeTO-247HVSymbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 2500 V D (Tab)DVDGR TJ = 25C to 150C, RGS = 1M 2500 VVGSS Continuous 20 VG = Gate D = Drai
ixth04n300p3hv.pdf
Advance Technical InformationHigh Voltage VDSS = 3000VIXTH04N300P3HVPower MOSFETID25 = 0.40A RDS(on) 190 N-Channel Enhancement ModeTO-247HVSymbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 3000 V D (Tab)DVDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS Continuous 20 VG = Gate D = Drai
ixth02n250 ixtv02n250s.pdf
High VoltageIXTH02N250VDSS = 2500VPower MOSFETsID25 = 200mA IXTV02N250S RDS(on) 450 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247 (IXTH)GD D (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2500 VPLUS220SMD (IXTV_S)VDGR TJ = 25C to 150C, RGS = 1M 2500 VVGSS Continuous 20 VVGSM Transient
ixth02n450hv.pdf
High Voltage VDSS = 4500VIXTT02N450HVPower MOSFETID25 = 200mAIXTH02N450HV RDS(on) 625 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 4500 VVDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 VVGSM Transient
ixth06n220p3hv.pdf
Advance Technical InformationHigh Voltage VDSS = 2200VIXTH06N220P3HVPower MOSFETID25 = 0.60A RDS(on) 80 N-Channel Enhancement ModeTO-247HVSymbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 2200 V D (Tab)DVDGR TJ = 25C to 150C, RGS = 1M 2200 VVGSS Continuous 20 VG = Gate D = Drain
ixth03n400 ixtv03n400s.pdf
Advance Technical InformationHigh Voltage VDSS = 4000VIXTH03N400ID25 = 300mAPower MOSFET IXTV03N400S RDS(on) 290 N-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 4000 VDD (Tab)SVDGR TJ = 25C to 150C, RGS = 1M 4000 VVGSS Continuous 20 VVGSM Transie
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Список транзисторов
Обновления
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