IXTA3N120HV Todos los transistores

 

IXTA3N120HV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTA3N120HV
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
   Paquete / Cubierta: TO-263
     - Selección de transistores por parámetros

 

IXTA3N120HV Datasheet (PDF)

 ..1. Size:138K  ixys
 ixta3n120hv.pdf pdf_icon

IXTA3N120HV

High Voltage VDSS = 1200VIXTA3N120HVID25 = 3APower MOSFET RDS(on) 4.5 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-263Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 V D (Tab)VGSS Continuous 20 VVGSM Transient 30 VG = Gate D

 5.1. Size:562K  ixys
 ixta3n120 ixtp3n120.pdf pdf_icon

IXTA3N120HV

VDSS ID25 RDS(on)High VoltageIXTA 3N120Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120N-Channel Enhancement ModeAvalanche Rated, High dv/dtSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 V DSID25 TC = 25C3 AIDM TC =

 5.2. Size:560K  ixys
 ixta3n120trl.pdf pdf_icon

IXTA3N120HV

VDSS ID25 RDS(on)High VoltageIXTA 3N120Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120N-Channel Enhancement ModeAvalanche Rated, High dv/dtSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 V DSID25 TC = 25C3 AIDM TC =

 5.3. Size:175K  ixys
 ixta3n120 ixtp3n120 ixth3n120.pdf pdf_icon

IXTA3N120HV

High Voltage VDSS = 1200VIXTA3N120Power MOSFET ID25 = 3AIXTP3N120 RDS(on) 4.5 IXTH3N120N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 VVGSS Continuous

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: VBZE50P03 | IPB60R190C6 | FCH20N60

 

 
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