IXTA3N120HV PDF and Equivalents Search

 

IXTA3N120HV PDF Specs and Replacement


   Type Designator: IXTA3N120HV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO-263
 

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IXTA3N120HV PDF Specs

 ..1. Size:138K  ixys
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IXTA3N120HV

High Voltage VDSS = 1200V IXTA3N120HV ID25 = 3A Power MOSFET RDS(on) 4.5 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V D (Tab) VGSS Continuous 20 V VGSM Transient 30 V G = Gate D ... See More ⇒

 5.1. Size:562K  ixys
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IXTA3N120HV

VDSS ID25 RDS(on) High Voltage IXTA 3N120 Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C3 A IDM TC = ... See More ⇒

 5.2. Size:560K  ixys
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IXTA3N120HV

VDSS ID25 RDS(on) High Voltage IXTA 3N120 Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C3 A IDM TC = ... See More ⇒

 5.3. Size:175K  ixys
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IXTA3N120HV

High Voltage VDSS = 1200V IXTA3N120 Power MOSFET ID25 = 3A IXTP3N120 RDS(on) 4.5 IXTH3N120 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V VGSS Continuous... See More ⇒

Detailed specifications: IXTF02N450 , IXTA8N65X2 , IXTA80N075L2 , IXTA64N10L2 , IXTA4N65X2 , IXTA4N150HV , IXTA3N150HV , IXTA3N120TRL , SKD502T , IXTA3N100D2HV , IXTA270N04T4 , IXTA20N65X , IXTA1N200P3HV , IXTA1N170DHV , IXTA180N055T , IXTA15N50L2 , IXTA130N10T-TRL .

Keywords - IXTA3N120HV MOSFET specs

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