IXFT94N30P3 Todos los transistores

 

IXFT94N30P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXFT94N30P3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1040 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 94 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 965 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
   Paquete / Cubierta: TO-268
 

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IXFT94N30P3 Datasheet (PDF)

 ..1. Size:145K  ixys
ixfh94n30p3 ixfq94n30p3 ixft94n30p3.pdf pdf_icon

IXFT94N30P3

Advance Technical InformationPolar3TM HiperFETTM VDSS = 300VIXFT94N30P3ID25 = 94APower MOSFETsIXFQ94N30P3 RDS(on) 36m IXFH94N30P3N-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VGVDGR TJ = 25C to 150C

 5.1. Size:174K  ixys
ixfh94n30t ixft94n30t.pdf pdf_icon

IXFT94N30P3

Preliminary Technical InformationTrenchTM HiperFETTM VDSS = 300VIXFT94N30TPower MOSFETs ID25 = 94AIXFH94N30T RDS(on) 36m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M 300 VTO-247 (I

 9.1. Size:225K  ixys
ixfh96n20p ixft96n20p ixfv96n20p.pdf pdf_icon

IXFT94N30P3

IXFH 96N20PPolarHTTM HiPerFETVDSS = 200 VIXFT 96N20PID25 = 96 APower MOSFETIXFV 96N20P RDS(on) 24 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 200 VVDGR TJ = 25 C to 150 C; RGS = 1 M 200 V

 9.2. Size:89K  ixys
ixft9n80q.pdf pdf_icon

IXFT94N30P3

IXFH 9N80Q VDSS = 800 VHiPerFETTMIXFT 9N80Q ID25 = 9 APower MOSFETsRDS(on) = 1.1 Q-Class N-Channel Enhancement Mode trr 250 nsAvalanche Rated Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VVGSM Transi

Otros transistores... IXFX210N17T , IXFX150N30P3 , IXFX12N90Q , IXFX120N65X2 , IXFX120N30P3 , IXFX100N65X2 , IXFT9N80Q , IXFT94N30T , 8N60 , IXFT70N30Q3 , IXFT50N60X , IXFT50N20 , IXFT46N30T , IXFT44N50Q3 , IXFT40N50Q , IXFT30N60X , IXFT30N60Q .

 

 
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