All MOSFET. IXFT94N30P3 Datasheet

 

IXFT94N30P3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFT94N30P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1040 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 94 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 102 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 965 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO-268

 IXFT94N30P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFT94N30P3 Datasheet (PDF)

 ..1. Size:145K  ixys
 ixfh94n30p3 ixfq94n30p3 ixft94n30p3.pdf

IXFT94N30P3 IXFT94N30P3

Advance Technical InformationPolar3TM HiperFETTM VDSS = 300VIXFT94N30P3ID25 = 94APower MOSFETsIXFQ94N30P3 RDS(on) 36m IXFH94N30P3N-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VGVDGR TJ = 25C to 150C

 5.1. Size:174K  ixys
 ixfh94n30t ixft94n30t.pdf

IXFT94N30P3 IXFT94N30P3

Preliminary Technical InformationTrenchTM HiperFETTM VDSS = 300VIXFT94N30TPower MOSFETs ID25 = 94AIXFH94N30T RDS(on) 36m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M 300 VTO-247 (I

 9.1. Size:225K  ixys
 ixfh96n20p ixft96n20p ixfv96n20p.pdf

IXFT94N30P3 IXFT94N30P3

IXFH 96N20PPolarHTTM HiPerFETVDSS = 200 VIXFT 96N20PID25 = 96 APower MOSFETIXFV 96N20P RDS(on) 24 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 200 VVDGR TJ = 25 C to 150 C; RGS = 1 M 200 V

 9.2. Size:89K  ixys
 ixft9n80q.pdf

IXFT94N30P3 IXFT94N30P3

IXFH 9N80Q VDSS = 800 VHiPerFETTMIXFT 9N80Q ID25 = 9 APower MOSFETsRDS(on) = 1.1 Q-Class N-Channel Enhancement Mode trr 250 nsAvalanche Rated Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VVGSM Transi

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SSPS924NE | HUF75344G3

 

 
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