IXFT23N80Q Todos los transistores

 

IXFT23N80Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFT23N80Q

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 500 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 23 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Carga de compuerta (Qg): 130 nC

Tiempo de elevación (tr): 27 nS

Conductancia de drenaje-sustrato (Cd): 500 pF

Resistencia drenaje-fuente RDS(on): 0.42 Ohm

Empaquetado / Estuche: TO-268

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IXFT23N80Q Datasheet (PDF)

1.1. ixft23n80q.pdf Size:577K _ixys

IXFT23N80Q
IXFT23N80Q

IXFH23N80Q VDSS = 800 V HiPerFETTM IXFT23N80Q ID25 = 23 A Power MOSFETs Ω Ω RDS(on) = 0.42 Ω Ω Ω Q-Class N-Channel Enhancement Mode ≤ ≤ trr ≤ 250 ns ≤ ≤ Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V (TAB) VGS Continuous ±30

3.1. ixft23n60q.pdf Size:572K _ixys

IXFT23N80Q
IXFT23N80Q

IXFH 23N60Q VDSS = 600 V HiPerFETTM IXFT 23N60Q ID25 = 23 A Power MOSFETs Ω RDS(on) = 0.32 Ω Ω Ω Ω Q-Class ≤ trr ≤ ≤ 250ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; R

 5.1. ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf Size:158K _ixys

IXFT23N80Q
IXFT23N80Q

VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM21N50 500 V 21 A 0.25 ? ? ? ? Power MOSFETs ? IXFH/IXFM/IXFT24N50 500 V 24 A 0.23 ? ? ? ? ? IXFH/IXFT26N50 500 V 26 A 0.20 ? ? ? ? N-Channel Enhancement Mode ? High dv/dt, Low trr, HDMOSTM Family trr ? ? 250 ns ? ? TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS =

5.2. ixfh20n60q ixft20n60q.pdf Size:144K _ixys

IXFT23N80Q
IXFT23N80Q

IXFH 20N60Q VDSS = 600 V HiPerFETTM IXFT 20N60Q ID25 = 20 A Power MOSFETs Ω RDS(on) = 0.35 Ω Ω Ω Ω Q-Class ≤ trr ≤ ≤ 250ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS C

 5.3. ixft28n50q.pdf Size:121K _ixys

IXFT23N80Q
IXFT23N80Q

Advanced Technical Information IXFH 28N50Q VDSS = 500 V HiPerFETTM IXFT 28N50Q ID25 = 28 A Power MOSFETs Ω RDS(on) = 0.20 Ω Ω Ω Ω Q-Class ≤ ≤ trr ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500

5.4. ixfh24n80p ixfk24n80p ixft24n80p.pdf Size:158K _ixys

IXFT23N80Q
IXFT23N80Q

IXFH 24N80P VDSS = 800 V PolarHVTM HiPerFET IXFK 24N80P ID25 = 24 A Power MOSFET ? ? IXFT 24N80P RDS(on) ? ? ? 400 m? ? ? ? ? N-Channel Enhancement Mode ? ? trr ? 250 ns ? ? Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V VGSS Continuous 30 V G VGSM Transient

 5.5. ixft24n90p ixfh24n90p.pdf Size:122K _ixys

IXFT23N80Q
IXFT23N80Q

Preliminary Technical Information VDSS = 900V IXFH24N90P PolarTM Power MOSFET ID25 = 24A IXFT24N90P HiPerFETTM ? ? RDS(on) ? 420m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 300ns ? ? ? Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 900 V VDGR TJ = 25C to 150C, RGS = 1M? 900 V TAB VGSS Continuous 30

5.6. ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf Size:145K _ixys

IXFT23N80Q
IXFT23N80Q

HiPerFETTM VDSS ID25 RDS(on) Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 ? ? ? ? ? ? IXFH/IXFT 26N50Q 500 V 26 A 0.20 ? ? ? ? Q-Class ? trr ? ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 20 V (TAB)

5.7. ixfh20n80p ixft20n80p ixfv20n80p.pdf Size:326K _ixys

IXFT23N80Q
IXFT23N80Q

IXFH 20N80P VDSS = 800 V PolarHVTM HiPerFET IXFT 20N80P ID25 = 20 A Power MOSFET IXFV 20N80P ? ? RDS(on) ? 520 m ? ? ? ? ? ? ? N-Channel Enhancement Mode IXFV 20N80PS ? trr ? 250 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 800 V (TAB) VGSS Continuou

5.8. ixfh26n60q ixft26n60q.pdf Size:107K _ixys

IXFT23N80Q
IXFT23N80Q

IXFH 26N60Q VDSS = 600 V HiPerFETTM IXFT 26N60Q ID25 = 26 A Power MOSFETs ? RDS(on) = 0.25 ? ? ? ? Q-Class ? ? trr ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 T

5.9. ixfh26n60p ixft26n60p ixfv26n60p.pdf Size:197K _ixys

IXFT23N80Q
IXFT23N80Q

IXFH26N60P VDSS = 600 V PolarHVTM IXFT26N60P ID25 = 26 A Power MOSFET ? ? ? ? IXFV26N60P RDS(on) ? 270 m? ? ? ? ? N-Channel Enhancement Mode ? ? IXFV26N60PS trr ? 200 ns ? ? Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGSS Continuous 30 V G VGSM Transient 40

5.10. ixfh20n80q ixfk20n80q ixft20n80q.pdf Size:149K _ixys

IXFT23N80Q
IXFT23N80Q

IXFH20N80Q VDSS = 800 V HiPerFETTM IXFK20N80Q ID25 = 20 A Power MOSFETs ? ? IXFT20N80Q RDS(on) = 0.42 ? ? ? Q-Class N-Channel Enhancement Mode ? ? trr ? 250 ns ? ? Avalanche Rated, Low Qg, High dv/dt Preliminary Data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V (TAB) VGS Continuous 20

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