IXFT23N80Q
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFT23N80Q
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 500
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 23
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 130
nC
trⓘ - Rise Time: 27
nS
Cossⓘ -
Output Capacitance: 500
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.42
Ohm
Package:
TO-268
IXFT23N80Q
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFT23N80Q
Datasheet (PDF)
..1. Size:577K ixys
ixft23n80q.pdf 
IXFH23N80Q VDSS = 800 VHiPerFETTMIXFT23N80Q ID25 = 23 APower MOSFETs RDS(on) = 0.42 Q-ClassN-Channel Enhancement Mode trr 250 ns Avalanche Rated,Low Qg, High dv/dtTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 V(TAB)VGS Continuous 30
7.1. Size:572K ixys
ixft23n60q.pdf
IXFH 23N60Q VDSS = 600 VHiPerFETTMIXFT 23N60Q ID25 = 23 APower MOSFETs RDS(on) = 0.32 Q-Classtrr 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt,Low Gate Charge and CapacitancesPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; R
9.2. Size:145K ixys
ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf
HiPerFETTM VDSS ID25 RDS(on)Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 IXFH/IXFT 26N50Q 500 V 26 A 0.20 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1
9.3. Size:122K ixys
ixft24n90p ixfh24n90p.pdf
Preliminary Technical InformationVDSS = 900VIXFH24N90PPolarTM Power MOSFETID25 = 24AIXFT24N90PHiPerFETTM RDS(on) 420m N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C, RGS = 1M
9.4. Size:197K ixys
ixfh26n60p ixft26n60p ixfv26n60p.pdf
IXFH26N60P VDSS = 600 VPolarHVTMIXFT26N60P ID25 = 26 APower MOSFET IXFV26N60P RDS(on) 270 m N-Channel Enhancement ModeIXFV26N60PS trr 200 nsFast Recovery DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Contin
9.5. Size:121K ixys
ixft28n50q.pdf
Advanced Technical InformationIXFH 28N50Q VDSS = 500 VHiPerFETTMIXFT 28N50Q ID25 = 28 APower MOSFETsRDS(on) = 0.20 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500
9.6. Size:144K ixys
ixfh20n60q ixft20n60q.pdf
IXFH 20N60Q VDSS = 600 VHiPerFETTMIXFT 20N60Q ID25 = 20 APower MOSFETs RDS(on) = 0.35 Q-Classtrr 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt,Low Gate Charge and CapacitancesSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS C
9.7. Size:149K ixys
ixfh20n80q ixfk20n80q ixft20n80q.pdf
IXFH20N80Q VDSS = 800 VHiPerFETTMIXFK20N80Q ID25 = 20 APower MOSFETs IXFT20N80Q RDS(on) = 0.42 Q-ClassN-Channel Enhancement Mode trr 250 ns Avalanche Rated,Low Qg, High dv/dtPreliminary DataTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800
9.8. Size:158K ixys
ixfh24n80p ixfk24n80p ixft24n80p.pdf
IXFH 24N80P VDSS = 800 VPolarHVTM HiPerFETIXFK 24N80P ID25 = 24 APower MOSFET IXFT 24N80P RDS(on) 400 m N-Channel Enhancement Mode trr 250 ns Avalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGSS Con
9.9. Size:326K ixys
ixfh20n80p ixft20n80p ixfv20n80p.pdf
IXFH 20N80PVDSS = 800 VPolarHVTM HiPerFETIXFT 20N80PID25 = 20 APower MOSFETIXFV 20N80P RDS(on) 520 m N-Channel Enhancement ModeIXFV 20N80PStrr 250 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25 C to 150 C 800 VVDGR TJ = 25 C to 150 C; RG
9.10. Size:107K ixys
ixfh26n60q ixft26n60q.pdf
IXFH 26N60Q VDSS = 600 VHiPerFETTMIXFT 26N60Q ID25 = 26 APower MOSFETsRDS(on) = 0.25 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 V(TAB)VGS Continuous 20 V
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