IRFP264 Todos los transistores

PD - 94900 IRFP264PbF Lead-Free 12/18/03 Document Number 91217 www.vishay.com 1 IRFP264PbF Document Number 91217 www.vishay.com 2 IRFP264PbF Document Number 91217 www.vishay.com 3 IRFP264PbF Document Number 91217 www.vishay.com 4 IRFP264PbF Document Number 91217 www.vishay.com 5 IRFP264PbF Document Number 91217 www.vishay.com 6 IRFP264PbF TO-247AC Package O

PD - 94900 IRFP264PbF Lead-Free www.irf.com 1 12/18/03 IRFP264PbF 2 www.irf.com IRFP264PbF www.irf.com 3 IRFP264PbF 4 www.irf.com IRFP264PbF www.irf.com 5 IRFP264PbF 6 www.irf.com IRFP264PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2

IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.075 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 210 Fast Switching Qgs (nC) 35 Ease of Paralleling Qgd (nC) 98 Simple Drive Requirements Configuration Single Compl

iscN-Channel MOSFET Transistor IRFP264 FEATURES Low drain-source on-resistance RDS(ON) 75m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

PD - 94811 IRFP264NPbF HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175 C Operating Temperature Fast Switching RDS(on) = 60m Fully Avalanche Rated G Ease of Paralleling ID = 44A Simple Drive Requirements S Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi

PD - 94214 IRFP264N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175 C Operating Temperature Fast Switching RDS(on) = 60m Fully Avalanche Rated G Ease of Paralleling ID = 44A Simple Drive Requirements S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) ( )VGS = 10 V 0.060 175 C Operating Temperature RoHS* Qg (Max.) (nC) 210 Fast Switching COMPLIANT Qgs (nC) 34 Fully Avalanche Rated Qgd (nC) 94 Ease of Paralleling Configuration Single Simple