IRFP264 Todos los transistores

 

IRFP264 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP264

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 280 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 38 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 210 nC

Resistencia drenaje-fuente RDS(on): 0.075 Ohm

Empaquetado / Estuche: TO3P

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IRFP264 Datasheet (PDF)

1.1. irfp264pbf.pdf Size:895K _upd-mosfet

IRFP264
IRFP264

PD - 94900 IRFP264PbF • Lead-Free www.irf.com 1 12/18/03 IRFP264PbF 2 www.irf.com IRFP264PbF www.irf.com 3 IRFP264PbF 4 www.irf.com IRFP264PbF www.irf.com 5 IRFP264PbF 6 www.irf.com IRFP264PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2

1.2. irfp264npbf.pdf Size:128K _upd-mosfet

IRFP264
IRFP264

IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 250 • Dynamic dV/dt Rating Available RDS(on) (Ω)VGS = 10 V 0.060 • 175 °C Operating Temperature RoHS* Qg (Max.) (nC) 210 • Fast Switching COMPLIANT Qgs (nC) 34 • Fully Avalanche Rated Qgd (nC) 94 • Ease of Paralleling Configuration Single • Simple

 1.3. irfp264n.pdf Size:222K _international_rectifier

IRFP264
IRFP264

PD - 94214 IRFP264N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast Switching RDS(on) = 60m? Fully Avalanche Rated G Ease of Paralleling ID = 44A Simple Drive Requirements S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r

1.4. irfp264.pdf Size:888K _international_rectifier

IRFP264
IRFP264

PD - 94900 IRFP264PbF Lead-Free 12/18/03 Document Number: 91217 www.vishay.com 1 IRFP264PbF Document Number: 91217 www.vishay.com 2 IRFP264PbF Document Number: 91217 www.vishay.com 3 IRFP264PbF Document Number: 91217 www.vishay.com 4 IRFP264PbF Document Number: 91217 www.vishay.com 5 IRFP264PbF Document Number: 91217 www.vishay.com 6 IRFP264PbF TO-247AC Package Outlin

 1.5. irfp264npbf.pdf Size:158K _international_rectifier

IRFP264
IRFP264

PD - 94811 IRFP264NPbF HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast Switching RDS(on) = 60m? Fully Avalanche Rated G Ease of Paralleling ID = 44A Simple Drive Requirements S Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ext

1.6. irfp264 sihfp264.pdf Size:1541K _vishay

IRFP264
IRFP264

IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.075 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 210 Fast Switching Qgs (nC) 35 Ease of Paralleling Qgd (nC) 98 Simple Drive Requirements Configuration Single Compliant to RoHS Direc

1.7. irfp264.pdf Size:241K _inchange_semiconductor

IRFP264
IRFP264

isc N-Channel MOSFET Transistor IRFP264 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching power application ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 250 V DSS

Otros transistores... IRFP250A , IRFP251 , IRFP252 , IRFP253 , IRFP254 , IRFP254A , IRFP255 , IRFP260 , RFP50N06 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 .

 

 
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