IRFP264 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP264

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 280 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 38 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 210 nC

Resistencia drenaje-fuente RDS(on): 0.075 Ohm

Empaquetado / Estuche: TO3P

Búsqueda de reemplazo de MOSFET IRFP264

IRFP264 Datasheet (PDF)

1.1. irfp264pbf.pdf Size:895K _upd-mosfet

PD - 94900 IRFP264PbF • Lead-Free www.irf.com 1 12/18/03 IRFP264PbF 2 www.irf.com IRFP264PbF www.irf.com 3 IRFP264PbF 4 www.irf.com IRFP264PbF www.irf.com 5 IRFP264PbF 6 www.irf.com IRFP264PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2

1.2. irfp264npbf.pdf Size:128K _upd-mosfet

IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 250 • Dynamic dV/dt Rating Available RDS(on) (Ω)VGS = 10 V 0.060 • 175 °C Operating Temperature RoHS* Qg (Max.) (nC) 210 • Fast Switching COMPLIANT Qgs (nC) 34 • Fully Avalanche Rated Qgd (nC) 94 • Ease of Paralleling Configuration Single • Simple

1.3. irfp264n.pdf Size:222K _international_rectifier

PD - 94214 IRFP264N HEXFET� Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175�C Operating Temperature Fast Switching RDS(on) = 60m? Fully Avalanche Rated G Ease of Paralleling ID = 44A Simple Drive Requirements S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r

1.4. irfp264npbf.pdf Size:158K _international_rectifier

PD - 94811 IRFP264NPbF HEXFET� Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175�C Operating Temperature Fast Switching RDS(on) = 60m? Fully Avalanche Rated G Ease of Paralleling ID = 44A Simple Drive Requirements S Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ext

1.5. irfp264.pdf Size:888K _international_rectifier

PD - 94900 IRFP264PbF � Lead-Free 12/18/03 Document Number: 91217 www.vishay.com 1 IRFP264PbF Document Number: 91217 www.vishay.com 2 IRFP264PbF Document Number: 91217 www.vishay.com 3 IRFP264PbF Document Number: 91217 www.vishay.com 4 IRFP264PbF Document Number: 91217 www.vishay.com 5 IRFP264PbF Document Number: 91217 www.vishay.com 6 IRFP264PbF TO-247AC Package Outlin

1.6. irfp264 sihfp264.pdf Size:1541K _vishay

IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Dynamic dV/dt Rating VDS (V) 250 Available � Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.075 RoHS* � Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 210 � Fast Switching Qgs (nC) 35 � Ease of Paralleling Qgd (nC) 98 � Simple Drive Requirements Configuration Single � Compliant to RoHS Direc

Otros transistores... IRFP250A , IRFP251 , IRFP252 , IRFP253 , IRFP254 , IRFP254A , IRFP255 , IRFP260 , RFP50N06 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 .

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