IRFP264 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP264
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 280 W
Tensión drenaje-fuente (Vds): 250 V
Tensión compuerta-fuente (Vgs): 10 V
Corriente continua de drenaje (Id): 38 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 210 nC
Resistencia drenaje-fuente RDS(on): 0.075 Ohm
Empaquetado / Estuche: TO3P
Búsqueda de reemplazo de MOSFET IRFP264
IRFP264 Datasheet (PDF)
1.1. irfp264pbf.pdf 
Size:895K _upd-mosfet
PD - 94900 IRFP264PbF • Lead-Free www.irf.com 1 12/18/03 IRFP264PbF 2 www.irf.com IRFP264PbF www.irf.com 3 IRFP264PbF 4 www.irf.com IRFP264PbF www.irf.com 5 IRFP264PbF 6 www.irf.com IRFP264PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2
1.2. irfp264npbf.pdf Size:128K _upd-mosfet
IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 250 • Dynamic dV/dt Rating Available RDS(on) (Ω)VGS = 10 V 0.060 • 175 °C Operating Temperature RoHS* Qg (Max.) (nC) 210 • Fast Switching COMPLIANT Qgs (nC) 34 • Fully Avalanche Rated Qgd (nC) 94 • Ease of Paralleling Configuration Single • Simple
1.3. irfp264n.pdf Size:222K _international_rectifier
PD - 94214 IRFP264N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast Switching RDS(on) = 60m? Fully Avalanche Rated G Ease of Paralleling ID = 44A Simple Drive Requirements S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r
1.4. irfp264npbf.pdf Size:158K _international_rectifier
PD - 94811 IRFP264NPbF HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast Switching RDS(on) = 60m? Fully Avalanche Rated G Ease of Paralleling ID = 44A Simple Drive Requirements S Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ext
1.5. irfp264.pdf Size:888K _international_rectifier
PD - 94900 IRFP264PbF Lead-Free 12/18/03 Document Number: 91217 www.vishay.com 1 IRFP264PbF Document Number: 91217 www.vishay.com 2 IRFP264PbF Document Number: 91217 www.vishay.com 3 IRFP264PbF Document Number: 91217 www.vishay.com 4 IRFP264PbF Document Number: 91217 www.vishay.com 5 IRFP264PbF Document Number: 91217 www.vishay.com 6 IRFP264PbF TO-247AC Package Outlin
1.6. irfp264 sihfp264.pdf Size:1541K _vishay
IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.075 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 210 Fast Switching Qgs (nC) 35 Ease of Paralleling Qgd (nC) 98 Simple Drive Requirements Configuration Single Compliant to RoHS Direc
Otros transistores... IRFP250A , IRFP251 , IRFP252 , IRFP253 , IRFP254 , IRFP254A , IRFP255 , IRFP260 , RFP50N06 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 .
