All MOSFET. IRFP264 Datasheet

 

IRFP264 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP264

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 280 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 38 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 210 nC

Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm

Package: TO3P

IRFP264 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFP264 Datasheet (PDF)

1.1. irfp264pbf.pdf Size:895K _upd-mosfet

IRFP264
IRFP264

PD - 94900 IRFP264PbF • Lead-Free www.irf.com 1 12/18/03 IRFP264PbF 2 www.irf.com IRFP264PbF www.irf.com 3 IRFP264PbF 4 www.irf.com IRFP264PbF www.irf.com 5 IRFP264PbF 6 www.irf.com IRFP264PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2

1.2. irfp264npbf.pdf Size:128K _upd-mosfet

IRFP264
IRFP264

IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 250 • Dynamic dV/dt Rating Available RDS(on) (Ω)VGS = 10 V 0.060 • 175 °C Operating Temperature RoHS* Qg (Max.) (nC) 210 • Fast Switching COMPLIANT Qgs (nC) 34 • Fully Avalanche Rated Qgd (nC) 94 • Ease of Paralleling Configuration Single • Simple

 1.3. irfp264n.pdf Size:222K _international_rectifier

IRFP264
IRFP264

PD - 94214 IRFP264N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast Switching RDS(on) = 60m? Fully Avalanche Rated G Ease of Paralleling ID = 44A Simple Drive Requirements S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r

1.4. irfp264npbf.pdf Size:158K _international_rectifier

IRFP264
IRFP264

PD - 94811 IRFP264NPbF HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast Switching RDS(on) = 60m? Fully Avalanche Rated G Ease of Paralleling ID = 44A Simple Drive Requirements S Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ext

 1.5. irfp264.pdf Size:888K _international_rectifier

IRFP264
IRFP264

PD - 94900 IRFP264PbF Lead-Free 12/18/03 Document Number: 91217 www.vishay.com 1 IRFP264PbF Document Number: 91217 www.vishay.com 2 IRFP264PbF Document Number: 91217 www.vishay.com 3 IRFP264PbF Document Number: 91217 www.vishay.com 4 IRFP264PbF Document Number: 91217 www.vishay.com 5 IRFP264PbF Document Number: 91217 www.vishay.com 6 IRFP264PbF TO-247AC Package Outlin

1.6. irfp264 sihfp264.pdf Size:1541K _vishay

IRFP264
IRFP264

IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.075 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 210 Fast Switching Qgs (nC) 35 Ease of Paralleling Qgd (nC) 98 Simple Drive Requirements Configuration Single Compliant to RoHS Direc

Datasheet: IRFP250A , IRFP251 , IRFP252 , IRFP253 , IRFP254 , IRFP254A , IRFP255 , IRFP260 , RFP50N06 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 .

 
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