IXFR24N100Q3 Todos los transistores

 

IXFR24N100Q3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFR24N100Q3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 500 W

Tensión drenaje-fuente (Vds): 1000 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 18 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 6.5 V

Carga de compuerta (Qg): 140 nC

Tiempo de elevación (tr): 24 nS

Conductancia de drenaje-sustrato (Cd): 590 pF

Resistencia drenaje-fuente RDS(on): 0.49 Ohm

Empaquetado / Estuche: ISOPLUS-247

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IXFR24N100Q3 Datasheet (PDF)

1.1. ixfr24n100.pdf Size:112K _ixys

IXFR24N100Q3
IXFR24N100Q3

HiPerFETTM Power VDSS = 1000V IXFR24N100 ID25 = 22A MOSFET ≤ Ω RDS(on) ≤ Ω ≤ 390mΩ ≤ Ω ≤ Ω ISOPLUS247TM ≤ t ≤ ≤ 250ns ≤ ≤ (Electrically Isolated Back Surface) rr N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Co

1.2. ixfr24n100q3.pdf Size:141K _ixys

IXFR24N100Q3
IXFR24N100Q3

Advance Technical Information HiperFETTM VDSS = 1000V IXFR24N100Q3 Power MOSFET ID25 = 18A ≤ Ω Q3-Class RDS(on) ≤ 490mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 300ns ≤ ≤ ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, R

 3.1. ixfr24n50 ixfr26n50.pdf Size:33K _ixys

IXFR24N100Q3
IXFR24N100Q3

Advanced Technical Information VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 26N50 500 V 24 A 0.20 W ISOPLUS247TM IXFR 24N50 500 V 22 A 0.23 W (Electrically Isolated Back Surface) trr £ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 50

3.2. ixfr24n80p.pdf Size:94K _ixys

IXFR24N100Q3
IXFR24N100Q3

IXFR 24N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 13 A Power MOSFET ? ? RDS(on) ? 420 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V VGSS Continuous

 3.3. ixfr24n50q ixfr26n50q.pdf Size:78K _ixys

IXFR24N100Q3
IXFR24N100Q3

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs Ω IXFR 26N50Q 500 V 24 A 0.20 Ω Ω Ω Ω ISOPLUS247TM Ω IXFR 24N50Q 500 V 22 A 0.23 Ω Ω Ω Ω (Electrically Isolated Back Surface) ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode High dV/dt, Low t , HDMOSTM Family rr Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25°C to 150°C

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