IXFR24N100Q3 Datasheet. Specs and Replacement

Type Designator: IXFR24N100Q3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V

Qg ⓘ - Total Gate Charge: 140 nC

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 590 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm

Package: ISOPLUS-247

IXFR24N100Q3 substitution

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IXFR24N100Q3 datasheet

 ..1. Size:141K  ixys
 ixfr24n100q3.pdf pdf_icon

IXFR24N100Q3

Advance Technical Information HiperFETTM VDSS = 1000V IXFR24N100Q3 Power MOSFET ID25 = 18A Q3-Class RDS(on) 490m trr 300ns (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C, R... See More ⇒

 4.1. Size:112K  ixys
 ixfr24n100.pdf pdf_icon

IXFR24N100Q3

HiPerFETTM Power VDSS = 1000V IXFR24N100 ID25 = 22A MOSFET RDS(on) 390m ISOPLUS247TM t 250ns (Electrically Isolated Back Surface) rr N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Co... See More ⇒

 7.1. Size:94K  ixys
 ixfr24n80p.pdf pdf_icon

IXFR24N100Q3

IXFR 24N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 13 A Power MOSFET RDS(on) 420 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RG... See More ⇒

 7.2. Size:33K  ixys
 ixfr24n50 ixfr26n50.pdf pdf_icon

IXFR24N100Q3

Advanced Technical Information VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 26N50 500 V 24 A 0.20 W ISOPLUS247TM IXFR 24N50 500 V 22 A 0.23 W (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 50... See More ⇒

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Detailed specifications: IXFT18N100Q3, IXFT17N80Q, IXFT150N20T, IXFT12N100QHV, IXFT120N25T, IXFR80N10Q, IXFR44N50Q3, IXFR27N80Q, 60N06, IXFR12N100F, IXFR10N100F, IXFQ94N30P3, IXFQ60N60X, IXFQ50N60X, IXFQ34N50P3, IXFQ30N60X, IXFQ26N50P3

Keywords - IXFR24N100Q3 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.