All MOSFET. IXFR24N100Q3 Datasheet

 

IXFR24N100Q3 Datasheet and Replacement


   Type Designator: IXFR24N100Q3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm
   Package: ISOPLUS-247
 

 IXFR24N100Q3 substitution

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IXFR24N100Q3 Datasheet (PDF)

 ..1. Size:141K  ixys
 ixfr24n100q3.pdf pdf_icon

IXFR24N100Q3

Advance Technical InformationHiperFETTM VDSS = 1000VIXFR24N100Q3Power MOSFET ID25 = 18A Q3-Class RDS(on) 490m trr 300ns(Electrically Isolated Tab)N-Channel Enhancement ModeFast Intrinsic RectifierISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, R

 4.1. Size:112K  ixys
 ixfr24n100.pdf pdf_icon

IXFR24N100Q3

HiPerFETTM Power VDSS = 1000VIXFR24N100ID25 = 22AMOSFET RDS(on) 390m ISOPLUS247TMt 250ns(Electrically Isolated Back Surface)rrN-Channel Enhancement ModeAvalanche RatedISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Co

 7.1. Size:94K  ixys
 ixfr24n80p.pdf pdf_icon

IXFR24N100Q3

IXFR 24N80P VDSS = 800 VPolarHVTM HiPerFETID25 = 13 APower MOSFET RDS(on) 420 m (Electrically Isolated Back Surface)trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)E153432VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RG

 7.2. Size:33K  ixys
 ixfr24n50 ixfr26n50.pdf pdf_icon

IXFR24N100Q3

Advanced Technical InformationVDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 26N50 500 V 24 A 0.20 WISOPLUS247TMIXFR 24N50 500 V 22 A 0.23 W(Electrically Isolated Back Surface)trr 250 nsN-Channel Enhancement ModeHigh dV/dt, Low trr, HDMOSTM FamilyISOPLUS 247TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 50

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Datasheet: IXFT18N100Q3 , IXFT17N80Q , IXFT150N20T , IXFT12N100QHV , IXFT120N25T , IXFR80N10Q , IXFR44N50Q3 , IXFR27N80Q , AO4468 , IXFR12N100F , IXFR10N100F , IXFQ94N30P3 , IXFQ60N60X , IXFQ50N60X , IXFQ34N50P3 , IXFQ30N60X , IXFQ26N50P3 .

History: AP93T03AGH-HF | TK30J25D | AOTE32136C | UF3205L-TA3-T | AP2626GY | 2SK3826 | SM8007NSF

Keywords - IXFR24N100Q3 MOSFET datasheet

 IXFR24N100Q3 cross reference
 IXFR24N100Q3 equivalent finder
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