IXFQ20N50P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFQ20N50P3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 380 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Tiempo de subida (tr): 5 nS
Conductancia de drenaje-sustrato (Cd): 230 pF
Resistencia entre drenaje y fuente RDS(on): 0.3 Ohm
Paquete / Cubierta: TO-3P
Búsqueda de reemplazo de MOSFET IXFQ20N50P3
IXFQ20N50P3 Datasheet (PDF)
ixfa20n50p3 ixfh20n50p3 ixfp20n50p3 ixfq20n50p3.pdf
Advance Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFA20N50P3ID25 = 20APower MOSFETsIXFP20N50P3 RDS(on) 300m IXFQ20N50P3N-Channel Enhancement Mode IXFH20N50P3Avalanche RatedTO-220AB (IXFP)Fast Intrinsic RectifierTO-263 AA (IXFA)GGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ
ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf
Advance Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFA26N50P3ID25 = 26APower MOSFETsIXFP26N50P3 RDS(on) 230m IXFQ26N50P3N-Channel Enhancement Mode IXFH26N50P3Avalanche RatedTO-220AB (IXFP)Fast Intrinsic RectifierTO-263 AA (IXFA)GGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ
ixfa24n60x ixfh24n60x ixfp24n60x ixfq24n60x.pdf
Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFA24N60XPower MOSFET ID25 = 24AIXFP24N60X RDS(on) 175m IXFQ24N60XIXFH24N60XN-Channel Enhancement ModeTO-220AB (IXFP)Avalanche RatedTO-263 AA (IXFA)Fast Intrinsic DiodeGGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ
ixfq28n60p3 ixfh28n60p3.pdf
Advance Technical InformationPolar3TM HiperFETTM VDSS = 600VIXFQ28N60P3ID25 = 28APower MOSFETsIXFH28N60P3 RDS(on) 260m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-3P (IXFQ)GDSymbol Test Conditions Maximum RatingsSTabVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C, RGS = 1M 600 VTO-247 ( IX
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
