IXFP8N50P3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFP8N50P3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 180 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 90 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de IXFP8N50P3 MOSFET
IXFP8N50P3 datasheet
ixfa8n50p3 ixfp8n50p3.pdf
Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFA8N50P3 Power MOSFETs ID25 = 8A IXFP8N50P3 RDS(on) 800m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 500 V TO-220AB (IXFP) VDGR TJ = 25 C to 150 C, RGS = 1M
ixfp8n50pm.pdf
Preliminary Technical Information IXFP 8N50PM VDSS = 500 V PolarHVTMHiPerFET ID25 = 4.4 A Power MOSFET RDS(on) 0.8 (Electrically Isolated Tab) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings (IXTP...M) OUTLINE VDSS TJ = 25 C to
ixfa8n85xhv ixfp8n85x ixfq8n85x.pdf
PreliminaryTechnical Information X-Class HiPERFET VDSS = 850V IXFA8N85XHV Power MOSFET ID25 = 8A IXFP8N85X RDS(on) 850m IXFQ8N85X N-Channel Enhancement Mode TO-263HV (IXFA) G S D (Tab) TO-220 (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 850 V VDGR TJ = 25 C to 150 C, RGS = 1M 850 V VGSS Continuous
ixfa80n25x3 ixfp80n25x3 ixfq80n25x3 ixfh80n25x3.pdf
Preliminary Technical Information X3-Class HiPerFETTM VDSS = 250V IXFA80N25X3 Power MOSFET ID25 = 80A IXFP80N25X3 RDS(on) 16m IXFQ80N25X3 TO-263 AA (IXFA) IXFH80N25X3 N-Channel Enhancement Mode Avalanche Rated G S Fast Intrinsic Diode D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C250D S D (Tab) V TO-3P (IXFQ) VDGR
Otros transistores... IXFQ94N30P3 , IXFQ60N60X , IXFQ50N60X , IXFQ34N50P3 , IXFQ30N60X , IXFQ26N50P3 , IXFQ24N60X , IXFQ20N50P3 , 50N06 , IXFP7N60P3 , IXFP5N50P3 , IXFP5N100PM , IXFP4N60P3 , IXFP36N30P3 , IXFP30N60X , IXFP26N50P3 , IXFP24N60X .
Liste
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