IXFP20N50P3M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFP20N50P3M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 58 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Tiempo de elevación (tr): 5 nS

Conductancia de drenaje-sustrato (Cd): 230 pF

Resistencia drenaje-fuente RDS(on): 0.3 Ohm

Empaquetado / Estuche: TO-220

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IXFP20N50P3M Datasheet (PDF)

1.1. ixfp20n50p3m.pdf Size:120K _ixys

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFP20N50P3M Power MOSFET ID25 = 8A ≤ Ω RDS(on) ≤ Ω ≤ 300mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier OVERMOLDED Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ± 30 V G D S VGSM Tran

1.2. ixfa20n50p3 ixfh20n50p3 ixfp20n50p3 ixfq20n50p3.pdf Size:157K _ixys

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA20N50P3 ID25 = 20A Power MOSFETs IXFP20N50P3 ≤ Ω RDS(on) ≤ Ω ≤ 300mΩ ≤ Ω ≤ Ω IXFQ20N50P3 N-Channel Enhancement Mode IXFH20N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

3.1. ixfa20n85xhv ixfp20n85x ixfh20n85x.pdf Size:288K _update-mosfet

X-Class HiPerFETTM VDSS = 850V IXFA20N85XHV Power MOSFET ID25 = 20A IXFP20N85X   RDS(on)    330m     IXFH20N85X N-Channel Enhancement Mode TO-263HV Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25C to 150C 850 V VDGR TJ = 25C to 150C, RGS = 1M 850 V VGSS Continuo

3.2. ixfp20n85x.pdf Size:220K _inchange_semiconductor

isc N-Channel MOSFET Transistor IXFP20N85X ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL P

Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

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