IXFA18N60X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFA18N60X
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 320 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 18 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4.5 V
Tiempo de elevación (tr): 30 nS
Conductancia de drenaje-sustrato (Cd): 1110 pF
Resistencia drenaje-fuente RDS(on): 0.23 Ohm
Empaquetado / Estuche: TO-263AA
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IXFA18N60X Datasheet (PDF)
1.1. ixfa18n60x ixfh18n60x ixfp18n60x.pdf 
Size:183K _ixys
Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA18N60X Power MOSFET ID25 = 18A IXFP18N60X RDS(on) 230m IXFH18N60X TO-263 AA (IXFA) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to
4.1. ixfa180n10t2 ixfp180n10t2.pdf Size:208K _ixys
Preliminary Technical Information TrenchT2TM HiperFETTM VDSS = 100V IXFA180N10T2 Power MOSFET ID25 = 180A IXFP180N10T2 ? ? RDS(on) ? ? ? 6m? ? ? ? ? N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 100 V TO-220AB (IXFP) VDGR TJ = 25C to 175C, RGS = 1M? 100 V VGSS Co
5.1. ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf Size:166K _ixys
Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA16N60P3 Power MOSFETs ID25 = 16A IXFP16N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 440mΩ ≤ Ω ≤ Ω IXFH16N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 15
5.2. ixfa14n60p3 ixfh14n60p3.pdf Size:173K _ixys
Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA14N60P3 Power MOSFETs ID25 = 14A IXFP14N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 540mΩ ≤ Ω ≤ Ω IXFH14N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 15
5.3. ixfa110n15t2 ixfp110n15t2.pdf Size:204K _ixys
Preliminary Technical Information TrenchT2TM HiperFET VDSS = 150V IXFA110N15T2 ID25 = 110A Power MOSFET IXFP110N15T2 ? ? RDS(on) ? ? ? 13m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25C to 175C 150 V (TAB) VDGR TJ = 25C to 175C, RGS = 1M? 150 V TO-220 VGSS Continuous 20 V VGSM Transient 30 V ID25 TC
5.4. ixfa14n60p ixfh14n60p ixfp14n60p.pdf Size:257K _ixys
IXFA 14N60P VDSS = 600 V PolarHVTM HiPerFET IXFH 14N60P ID25 = 14 A Power MOSFET ? ? IXFP 14N60P RDS(on) ? 550 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V S (TAB) VGS Continuous 30 V VGSM Tranisent 40 V TO-247 (I
5.5. ixfa16n50p ixfh16n50p ixfp16n50p.pdf Size:252K _ixys
IXFA 16N50P VDSS = 500 V PolarHVTM HiPerFET IXFH 16N50P ID25 = 16 A Power MOSFET IXFP 16N50P RDS(on) ? 400 m? ? ? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGS Continuous 30 V VGSM Transient 4
5.6. ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf Size:173K _ixys
Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFA16N50P3 Power MOSFETs ID25 = 16A IXFP16N50P3 ≤ Ω RDS(on) ≤ Ω ≤ 360mΩ ≤ Ω ≤ Ω IXFH16N50P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 15
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