IXFA18N60X - параметры транзистора MOSFET, его аналоги, datasheet

IXFA18N60X Datasheet (PDF)

..1. Size:183K ixys
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Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFA18N60XPower MOSFET ID25 = 18AIXFP18N60X RDS(on) 230m IXFH18N60XTO-263 AA (IXFA)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeGSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to

6.1. Size:336K ixys
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X2-Class HiPerFETTM VDSS = 650VIXFA18N65X2Power MOSFET ID25 = 18AIXFP18N65X2 RDS(on) 200m IXFH18N65X2N-Channel Enhancement ModeAvalanche RatedTO-263(IXFA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220VDSS TJ = 25C to 150C 650 V(IXFP)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVGS

8.1. Size:208K ixys
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Preliminary Technical InformationTrenchT2TM HiperFETTM VDSS = 100VIXFA180N10T2Power MOSFET ID25 = 180AIXFP180N10T2 RDS(on) 6m N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 VTO-220AB (IXFP)VDGR TJ = 25C to 175C, RG

8.2. Size:204K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFA180N10T2FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAX

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .