IRFP344 Todos los transistores

 

IRFP344 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFP344
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 150 W
   Voltaje máximo drenador - fuente |Vds|: 450 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 9.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 80(max) nC
   Tiempo de subida (tr): 28 nS
   Conductancia de drenaje-sustrato (Cd): 370 pF
   Resistencia entre drenaje y fuente RDS(on): 0.63 Ohm
   Paquete / Cubierta: TO247AC

 Búsqueda de reemplazo de MOSFET IRFP344

 

IRFP344 Datasheet (PDF)

 ..1. Size:1774K  international rectifier
irfp344pbf.pdf

IRFP344 IRFP344

PD- 95713IRFP344PbF Lead-Free8/2/04Document Number: 91223 www.vishay.com1IRFP344PbFDocument Number: 91223 www.vishay.com2IRFP344PbFDocument Number: 91223 www.vishay.com3IRFP344PbFDocument Number: 91223 www.vishay.com4IRFP344PbFDocument Number: 91223 www.vishay.com5IRFP344PbFDocument Number: 91223 www.vishay.com6IRFP344PbFDocument Number: 9122

 ..2. Size:202K  international rectifier
irfp344.pdf

IRFP344 IRFP344

 ..3. Size:2010K  vishay
irfp344pbf.pdf

IRFP344 IRFP344

IRFP344, SiHFP344Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 450 Repetitive Avalanche RatedRoHSRDS(on) ()VGS = 10 V 0.63COMPLIANT Isolated Central Mounting HoleQg (Max.) (nC) 80 Fast SwitchingQgs (nC) 12 Ease of ParallelingQgd (nC) 41 Simple Drive RequirementsConfiguration Single Lead (Pb)-freeD

 8.1. Size:172K  international rectifier
irfp340.pdf

IRFP344 IRFP344

 8.2. Size:92K  international rectifier
irfp3415.pdf

IRFP344 IRFP344

PD - 93962IRFP3415HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.042 Fully Avalanche RatedGDescription ID = 43ASFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance persilicon a

 8.3. Size:161K  international rectifier
irfp3415pbf.pdf

IRFP344 IRFP344

PD - 95512IRFP3415PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 0.042Gl Lead-FreeID = 43ASDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resi

 8.4. Size:1801K  international rectifier
irfp340pbf.pdf

IRFP344 IRFP344

PD- 95712IRFP340PbF Lead-Free8/2/04Document Number: 91222 www.vishay.com1IRFP340PbFDocument Number: 91222 www.vishay.com2IRFP340PbFDocument Number: 91222 www.vishay.com3IRFP340PbFDocument Number: 91222 www.vishay.com4IRFP340PbFDocument Number: 91222 www.vishay.com5IRFP340PbFDocument Number: 91222 www.vishay.com6IRFP340PbFPeak Diode Recovery d

 8.5. Size:933K  samsung
irfp340a.pdf

IRFP344 IRFP344

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 8.7. Size:191K  samsung
irfp340-343 irf740-743.pdf

IRFP344 IRFP344

 8.8. Size:1548K  vishay
irfp340 sihfp340.pdf

IRFP344 IRFP344

IRFP340, SiHFP340Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 62 COMPLIANT Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant

 8.9. Size:1554K  vishay
irfp340pbf sihfp340.pdf

IRFP344 IRFP344

IRFP340, SiHFP340Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 62 COMPLIANT Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant

 8.10. Size:161K  infineon
irfp3415pbf.pdf

IRFP344 IRFP344

PD - 95512IRFP3415PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 0.042Gl Lead-FreeID = 43ASDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resi

 8.11. Size:237K  inchange semiconductor
irfp340a.pdf

IRFP344 IRFP344

isc N-Channel MOSFET Transistor IRFP340AFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

 8.12. Size:62K  inchange semiconductor
irfp342r.pdf

IRFP344 IRFP344

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP342R FEATURES Drain Current ID= 8.7A@ TC=25 Drain Source Voltage- : VDSS= 400V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.80(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA

 8.13. Size:62K  inchange semiconductor
irfp340r.pdf

IRFP344 IRFP344

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP340R FEATURES Drain Current ID= 11A@ TC=25 Drain Source Voltage- : VDSS= 400V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.55(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

 8.14. Size:241K  inchange semiconductor
irfp3415.pdf

IRFP344 IRFP344

isc N-Channel MOSFET Transistor IRFP3415IIRFP3415FEATURESStatic drain-source on-resistance:RDS(on)42mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 8.15. Size:62K  inchange semiconductor
irfp343r.pdf

IRFP344 IRFP344

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP343R FEATURES Drain Current ID= 8.7A@ TC=25 Drain Source Voltage- : VDSS= 350V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.80(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA

 8.16. Size:62K  inchange semiconductor
irfp341r.pdf

IRFP344 IRFP344

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP341R FEATURES Drain Current ID= 11A@ TC=25 Drain Source Voltage- : VDSS= 350V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.55(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

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