IRFP344 datasheet, подбор замены

 ..1. Size:202K  international rectifier
 irfp344.pdf 

 ..2. Size:1774K  international rectifier
 irfp344pbf.pdf 

PD- 95713 IRFP344PbF Lead-Free 8/2/04 Document Number 91223 www.vishay.com 1 IRFP344PbF Document Number 91223 www.vishay.com 2 IRFP344PbF Document Number 91223 www.vishay.com 3 IRFP344PbF Document Number 91223 www.vishay.com 4 IRFP344PbF Document Number 91223 www.vishay.com 5 IRFP344PbF Document Number 91223 www.vishay.com 6 IRFP344PbF Document Number 9122

 ..3. Size:2010K  vishay
 irfp344pbf.pdf 

IRFP344, SiHFP344 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 450 Repetitive Avalanche Rated RoHS RDS(on) ( )VGS = 10 V 0.63 COMPLIANT Isolated Central Mounting Hole Qg (Max.) (nC) 80 Fast Switching Qgs (nC) 12 Ease of Paralleling Qgd (nC) 41 Simple Drive Requirements Configuration Single Lead (Pb)-free D

 8.1. Size:161K  international rectifier
 irfp3415pbf.pdf 

PD - 95512 IRFP3415PbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 150V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.042 G l Lead-Free ID = 43A S Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resi

 8.2. Size:172K  international rectifier
 irfp340.pdf 

 8.3. Size:92K  international rectifier
 irfp3415.pdf 

PD - 93962 IRFP3415 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175 C Operating Temperature Fast Switching RDS(on) = 0.042 Fully Avalanche Rated G Description ID = 43A S Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a

 8.4. Size:1801K  international rectifier
 irfp340pbf.pdf 

PD- 95712 IRFP340PbF Lead-Free 8/2/04 Document Number 91222 www.vishay.com 1 IRFP340PbF Document Number 91222 www.vishay.com 2 IRFP340PbF Document Number 91222 www.vishay.com 3 IRFP340PbF Document Number 91222 www.vishay.com 4 IRFP340PbF Document Number 91222 www.vishay.com 5 IRFP340PbF Document Number 91222 www.vishay.com 6 IRFP340PbF Peak Diode Recovery d

 8.5. Size:191K  samsung
 irfp340-343 irf740-743.pdf 

 8.6. Size:933K  samsung
 irfp340a.pdf 

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input Capacitance ID = 11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.437 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

 8.7. Size:191K  samsung
 irfp340 irfp341 irfp342 irfp343 irf740 irf741 irf742 irf743.pdf 

 8.8. Size:1548K  vishay
 irfp340 sihfp340.pdf 

IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 62 COMPLIANT Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant

 8.9. Size:1554K  vishay
 irfp340pbf sihfp340.pdf 

IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 62 COMPLIANT Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant

 8.10. Size:62K  inchange semiconductor
 irfp342r.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP342R FEATURES Drain Current ID= 8.7A@ TC=25 Drain Source Voltage- VDSS= 400V(Min) Static Drain-Source On-Resistance RDS(on) = 0.80 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA

 8.11. Size:62K  inchange semiconductor
 irfp343r.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP343R FEATURES Drain Current ID= 8.7A@ TC=25 Drain Source Voltage- VDSS= 350V(Min) Static Drain-Source On-Resistance RDS(on) = 0.80 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA

 8.12. Size:62K  inchange semiconductor
 irfp341r.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP341R FEATURES Drain Current ID= 11A@ TC=25 Drain Source Voltage- VDSS= 350V(Min) Static Drain-Source On-Resistance RDS(on) = 0.55 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

 8.13. Size:62K  inchange semiconductor
 irfp340r.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP340R FEATURES Drain Current ID= 11A@ TC=25 Drain Source Voltage- VDSS= 400V(Min) Static Drain-Source On-Resistance RDS(on) = 0.55 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

 8.14. Size:237K  inchange semiconductor
 irfp340a.pdf 

isc N-Channel MOSFET Transistor IRFP340A FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies

 8.15. Size:241K  inchange semiconductor
 irfp3415.pdf 

isc N-Channel MOSFET Transistor IRFP3415 IIRFP3415 FEATURES Static drain-source on-resistance RDS(on) 42m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source