IPZ65R019C7 Todos los transistores

 

IPZ65R019C7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPZ65R019C7
   Código: 65C7019
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 446 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 215 nC
   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: TO-247-4
 

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IPZ65R019C7 Datasheet (PDF)

 ..1. Size:1526K  infineon
 ipz65r019c7.pdf pdf_icon

IPZ65R019C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPZ65R019C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPZ65R019C7PG-TO 247-41 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 7.1. Size:1514K  infineon
 ipz65r045c7.pdf pdf_icon

IPZ65R019C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPZ65R045C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPZ65R045C7PG-TO 247-41 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 7.2. Size:1480K  infineon
 ipz65r095c7.pdf pdf_icon

IPZ65R019C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPZ65R095C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPZ65R095C7PG-TO 247-41 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 7.3. Size:1518K  infineon
 ipz65r065c7.pdf pdf_icon

IPZ65R019C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPZ65R065C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPZ65R065C7PG-TO 247-41 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

MOSTRAR MÁS

Otros transistores... IXFA20N50P3 , IXFA18N60X , IXFA16N60P3 , IXFA16N50P3 , IXFA14N60P3 , IPZ65R095C7 , IPZ65R065C7 , IPZ65R045C7 , AO3407 , IPZ60R099C7 , IPZ60R040C7 , IPW65R420CFD , IPW65R310CFD , IPW65R190E6 , IPW65R190CFDA , IPW65R190CFD , IPW65R190C7 .

 

 
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