IPZ65R019C7 MOSFET Datasheet: N-Ch, 650V, 75A. Full specification with pinout and replacement list

IPZ65R019C7 Specs and Replacement

Type Designator: IPZ65R019C7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 446 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 160 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: TO-247-4

IPZ65R019C7 substitution

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IPZ65R019C7 datasheet

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPZ65R019C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPZ65R019C7 PG-TO 247-4 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPZ65R045C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPZ65R045C7 PG-TO 247-4 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPZ65R095C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPZ65R095C7 PG-TO 247-4 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPZ65R065C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPZ65R065C7 PG-TO 247-4 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒

Detailed specifications: IXFA20N50P3 , IXFA18N60X , IXFA16N60P3 , IXFA16N50P3 , IXFA14N60P3 , IPZ65R095C7 , IPZ65R065C7 , IPZ65R045C7 , AO4407A , IPZ60R099C7 , IPZ60R040C7 , IPW65R420CFD , IPW65R310CFD , IPW65R190E6 , IPW65R190CFDA , IPW65R190CFD , IPW65R190C7 .