IPZ60R040C7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPZ60R040C7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 227 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 85 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO-247-4

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IPZ60R040C7 datasheet

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 ipz60r040c7.pdf pdf_icon

IPZ60R040C7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPZ60R040C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPZ60R040C7 PG-TO 247-4 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle a

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 ipz60r070p6.pdf pdf_icon

IPZ60R040C7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPZ60R070P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPZ60R070P6 PG-TO 247-4 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

 7.2. Size:1460K  infineon
 ipz60r099c7.pdf pdf_icon

IPZ60R040C7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPZ60R099C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPZ60R099C7 PG-TO 247-4 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle a

 7.3. Size:1296K  infineon
 ipz60r060c7.pdf pdf_icon

IPZ60R040C7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPZ60R060C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPZ60R060C7 PG-TO 247-4 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle a

MOSTRAR MÁS

Otros transistores... IXFA16N60P3, IXFA16N50P3, IXFA14N60P3, IPZ65R095C7, IPZ65R065C7, IPZ65R045C7, IPZ65R019C7, IPZ60R099C7, IRFP064N, IPW65R420CFD, IPW65R310CFD, IPW65R190E6, IPW65R190CFDA, IPW65R190CFD, IPW65R190C7, IPW65R190C6, IPW65R150CFDA