Аналоги IPZ60R040C7. Основные параметры
Наименование производителя: IPZ60R040C7
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 227 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 85 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
Тип корпуса: TO-247-4
Аналог (замена) для IPZ60R040C7
IPZ60R040C7 даташит
ipz60r040c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPZ60R040C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPZ60R040C7 PG-TO 247-4 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle a
ipz60r070p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPZ60R070P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPZ60R070P6 PG-TO 247-4 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and
ipz60r099c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPZ60R099C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPZ60R099C7 PG-TO 247-4 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle a
ipz60r060c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPZ60R060C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPZ60R060C7 PG-TO 247-4 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle a
Другие MOSFET... IXFA16N60P3 , IXFA16N50P3 , IXFA14N60P3 , IPZ65R095C7 , IPZ65R065C7 , IPZ65R045C7 , IPZ65R019C7 , IPZ60R099C7 , IRFP064N , IPW65R420CFD , IPW65R310CFD , IPW65R190E6 , IPW65R190CFDA , IPW65R190CFD , IPW65R190C7 , IPW65R190C6 , IPW65R150CFDA .
History: AP5G03DF | IXFN73N30
Список транзисторов
Обновления
MOSFET: AOTF20N40L | AOTF11N60L | AOT11N60L | AONS21303C | AOI280A60 | AOB66914L | AO3485C | AOI780A70 | AOB42S60L | AOTF950A70L | AOTF27S60L | AOTF11S60L | AONV070V65G1 | AOM065V120X2Q | AOM033V120X2 | AOK500V120X2
Popular searches
2sc1451 replacement | 6426 mosfet | b1565 | nce82h140 | 2n2369 equivalent | 2sd313 datasheet | k8a50d datasheet | 2sc381




